PDC6959X POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S  Networking  Load Switch  LED applications D D D S S D S G D D D S S D G S

Potens semiconductor corp. Ver.1.00 PDC6959X 60V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250µA -60 --- --- V IDSS Drain-Source Leakage Current VDS=-60V , VGS=0V , TJ=25℃ --- --- -1 µA VDS=-48V , VGS=0V , TJ=125℃ --- --- -10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-25A --- 10 12 m VGS(th) Gate Threshold Voltage VGS=VDS , ID=-250µA -1.2 -1.6 -2.5 V gfs Forward Transconductance VDS=-10V , ID=-3A --- 16 --- S Dynamic and switching Characteristics3 Qg Total Gate Charge VDS=-30V , VGS=-10V , ID=-35A --- 106 160 nC Qgs Gate-Source Charge --- 18 30 Qgd Gate-Drain Charge --- 8.8 15 Td(on) Turn-On Delay Time VDD=-30V , VGS=-10V , RG=6 ID=-35A --- 15 25 ns Tr Rise Time --- 20 30 Td(off) Turn-Off Delay Time --- 40 60 Tf Fall Time --- 50 75 Ciss Input Capacitance VDS=-30V , VGS=0V , F=1MHz --- 5600 8400 pF Coss Output Capacitance --- 300 450 Crss Reverse Transfer Capacitance --- 250 380 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -70 A ISM Pulsed Source Current --- --- -140 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Trr Reverse Recovery Time VR=-50V, IS=-10A dI/dt=100A/µs, TJ=25℃ --- 50 --- ns Qrr Reverse Recovery Charge --- 45 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-77A.,RG=25,Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDC6959X 60V P-Channel MOSFETs 5 18 31 44 57 70 Tc=25℃ VGS=-4.5V VGS=-6V VGS=-10V 0 2 4 6 8 10 Tc=25℃ ID=-12A ID=-25A 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 25 50 75 100 125 150 0 2 4 6 8 10 VGS=-3V VGS=-3.3V VGS=-3.5V VGS=-3.7V VGS=-10V VGS=-6V VGS=-4.5V -ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDC6959X 60V P-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform Fig.8 Gate Charge Characteristics -VGS -10V / -4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 20 40 60 80 100 120 ID=-35A VDS=-30V 100 1000 10000 0.1 1 10 Ciss Coss Crss 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDC6959X 60V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDC6959X 60V P-Channel MOSFETs PPAK5X6 RECOMMENDED LAND PATTERN unit : mm