PDC49E8BHX-5 POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 6

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Motor Drive  Power Tools  LED Lighting  Quick Charger D D D S S D S G D D D S S

Potens semiconductor corp. Ver.1.00 PDC49E8BHX-5 44V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 44 --- --- V IDSS Drain-Source Leakage Current VDS=44V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=36V , VGS=0V , TJ=100℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 2 2.5 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 2 3 4 V gfs Forward Transconductance VDS=10V , IS=3A --- 11 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=20V , VGS=10V , ID=80A --- 38 60 nC Qgs Gate-Source Charge3 , 4 --- 13 20 Qgd Gate-Drain Charge3 , 4 --- 12 20 Td(on) Turn-On Delay Time3 , 4 VDD=20V , VGS=10V , RG=6 ID=80A --- 8 12 ns Tr Rise Time3 , 4 --- 12 20 Td(off) Turn-Off Delay Time3 , 4 --- 15 25 Tf Fall Time3 , 4 --- 20 30 Ciss Input Capacitance VDS=20V , VGS=0V , F=1MHz --- 2650 4000 pF Coss Output Capacitance --- 1130 1700 Crss Reverse Transfer Capacitance --- 50 75 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 0.95 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 160 A ISM Pulsed Source Current --- --- 320 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/μs TJ=25℃ --- 70 --- ns Qrr Reverse Recovery Charge --- 100 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=79A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDC49E8BHX-5 44V N-Channel MOSFETs 120 150 180 25 50 75 100 125 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 120 150 0 2 4 6 8 VGS=5.3V VGS=5.5V VGS=5.7V VGS=10V VGS=6V 5 20 35 50 65 80 Tc=25℃ VGS=10V VGS=8V 2 4 6 8 10 Tc=25℃ ID=20A ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDC49E8BHX-5 44V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 EAS Waveform Fig.8 Gate Charge Characteristics 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 0 8 16 24 32 40 ID=80A VDS=20V Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 IAS VGS BVDSS VDD EAS= 1

2 L x IAS

0.1 1 10 Ciss Coss Crss VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDC49E8BHX-5 44V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDC49E8BHX-5 44V N-Channel MOSFETs PPAK5X6 RECOMMENDED LAND PATTERN unit : mm