PDC4902X POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  PowerTools  Load Switch  LED applications  Motor Drive Applications D D D S S D S G D D D S S

Potens semiconductor corp. Ver.1.01 PDC4902X 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=30A --- 1.7 2.2 m VGS=4.5V , ID=20A ‘--- 2.1 3 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 1.6 2.5 V gfs Forward Transconductance VDS=10V , ID=10A --- 45 --- S Dynamic and switching Characteristics Qg Total Gate Charge3,4 VDS=20V , VGS=4.5V , ID=10A --- 70 140 nC Qgs Gate-Source Charge3,4 --- 15 32 Qgd Gate-Drain Charge3,4 --- 40 80 Td(on) Turn-On Delay Time3,4 VDD=20V , VGS=10V , RG=10 ID=10A --- 24.6 48 ns Tr Rise Time3,4 --- 62.8 120 Td(off) Turn-Off Delay Time3,4 --- 224 440 Tf Fall Time3,4 --- 162 320 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 8000 12000 pF Coss Output Capacitance --- 550 1000 Crss Reverse Transfer Capacitance --- 420 800 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.2 2.4  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 140 A ISM Pulsed Source Current --- --- 280 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=20A , di/dt=100A/µs TJ=25℃ --- 32 --- ns Qrr Reverse Recovery Charge --- 19 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=85A., Starting TJ=25℃ 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDC4902X 40V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Normalized On Resistance Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Fig.6 Maximum Safe Operation Area Normalized Thermal Response ID , Drain Current (A) Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.01 PDC4902X 40V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.01 PDC4902X 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION