PDC4712V

PDC4712V POTENS

Document overview

• Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
• PDF pages: 9

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology PPAK3X3 Dual Pin Configuration G2 S2 G1 D2 D2 S2 S1 G2 G1 D1 D2

Potens semiconductor corp. Ver.1.01 PDC4712V 40V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=8A --- 24 29 m VGS=4.5V , ID=6A 31 40 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V gfs Forward Transconductance VDS=10V , ID=2A --- 3 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=20V , VGS=10V , ID=8A --- 5 8 nC Qgs Gate-Source Charge3 , 4 --- 0.5 3 Qgd Gate-Drain Charge3 , 4 --- 1.8 5 Td(on) Turn-On Delay Time3 , 4 VDD=20V , VGS=10V , RG=6 ID=8A --- 3 5 ns Tr Rise Time3 , 4 --- 10 15 Td(off) Turn-Off Delay Time3 , 4 --- 20 30 Tf Fall Time3 , 4 --- 6 10 Ciss Input Capacitance VDS=20V , VGS=0V , F=1MHz --- 410 615 pF Coss Output Capacitance --- 45 70 Crss Reverse Transfer Capacitance --- 30 45 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 15 A ISM Pulsed Source Current --- --- 30 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/µs, TJ=25℃ --- 20 --- ns Qrr Reverse Recovery Charge --- 5 --- nC Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=18A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.01 PDC4712V 40V N+P Dual Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 25 50 75 100 125 150 0 2 4 6 8 10 VGS=2.7V VGS=3V VGS=3.3V VGS=4V 5 7 9 11 13 15 Tc=25℃ VGS=4.5V VGS=6V VGS=10V 2 4 6 8 10 Tc=25℃ ID=4A ID=8A ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.01 PDC4712V 40V N+P Dual Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.8 Gate Charge Characteristics 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 1 2 3 4 5 ID=8A VDS=20V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 100 1000 0.1 1 10 Ciss Coss Crss VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.01 PDC4712V 40V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 --- --- V IDSS Drain-Source Leakage Current VDS=-40V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-32V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-2A --- 56 67 m VGS=-4.5V , ID=-1A --- 78 101 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.0 -1.6 -2.5 V gfs Forward Transconductance VDS=-10V , ID=-1A --- 3 --- S Dynamic and switching Characteristics Qg Total Gate Charge7,8 VDS=-20V , VGS=-10V , ID=-5A --- 5.4 8.5 nC Qgs Gate-Source Charge7,8 --- 0.6 3 Qgd Gate-Drain Charge7,8 --- 1.6 5 Td(on) Turn-On Delay Time7,8 VDD=-20V , VGS=-10V , RG=6 ID=-5A --- 12 18 ns Tr Rise Time7,8 --- 10 15 Td(off) Turn-Off Delay Time7,8 --- 45 70 Tf Fall Time7,8 --- 5 8 Ciss Input Capacitance VDS=-20V , VGS=0V , F=1MHz --- 440 660 pF Coss Output Capacitance --- 50 75 Crss Reverse Transfer Capacitance --- 35 55 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 16 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -10 A ISM Pulsed Source Current --- --- -20 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-30V, IS=-10A di/dt=100A/µs, TJ=25℃ --- 40 --- ns Qrr Reverse Recovery Charge --- 15 --- nC Note : 5. Repetitive Rating : Pulsed width limited by maximum junction temperature. 6. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-20A.,RG=25,Starting TJ=25℃ 7. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 8. Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDC4712V 40V N+P Dual Channel MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 25 50 75 100 125 150 0 2 4 6 8 10 VGS=-2.7V VGS=-3V VGS=-3.3V VGS=-3.5VVGS=-4.5V 4 5 6 7 8 9 10 Tc=25℃ ID=-1A ID=-2A 2 3 4 5 6 7 Tc=25℃ VGS=4.5V VGS=6V VGS=10V -ID , Continuous Drain Current (A) Fig.11 Typical Output Characteristics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.12 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.13 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.14 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.15 Turn-On Resistance vs. VGS Fig.16 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.01 PDC4712V 40V N+P Dual Channel MOSFETs Fig.20 Maximum Safe Operation Area Fig.21 Switching Time Waveform Fig.22 Gate Charge Waveform Fig.18 Gate Charge Characteristics -VGS -10V / -4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0 1 2 3 4 5 6 ID=-5A VDS=-20V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms 100 1000 0.1 1 10 Ciss Coss Crss -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.19 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.17 Capacitance Characteristics

Potens semiconductor corp. Ver.1.01 PDC4712V 40V N+P Dual Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.670 0.880 0.026 0.035 b 0.250 0.350 0.010 0.014 c 0.100 0.250 0.004 0.010 D 3.150 3.550 0.124 0.140 D1 3.000 3.300 0.118 0.130 D2 1.500 2.000 0.059 0.079 D3 0.130 0.200 0.005 0.008 E 3.100 3.500 0.122 0.138 E1 3.000 3.200 0.118 0.126 E2 2.350 2.600 0.093 0.102 e 0.650 BSC 0.026 BSC H 0.300 0.500 0.012 0.020 L 0.300 0.500 0.012 0.020 L1 0.130 REF 0.005 REF K 0.300 REF 0.012 REF θ 0° 12° 0° 12° M 0.150 REF 0.006 REF PPAK3x3 Dual PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.01 PDC4712V 40V N+P Dual Channel MOSFETs PPAK3X3 Dual RECOMMENDED LAND PATTERN unit : mm