PDC40B4Z POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Motor Drive  Power Tools  LED Lighting  Quick Charger D D D S S

Potens semiconductor corp. Ver.1.02 PDC40B4Z 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 40 --- --- V IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=32V , VGS=0V , TJ=100℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=8A --- 6 7.2 m VGS=4.5V , ID=6A --- 9.6 12.5 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.2 1.6 2.5 V gfs Forward Transconductance VDS=10V , IS=1A --- 5 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=20V , VGS=10V , ID=25A --- 13.7 20 nC Qgs Gate-Source Charge3 , 4 --- 2.2 5 Qgd Gate-Drain Charge3 , 4 --- 3.7 7 Td(on) Turn-On Delay Time3 , 4 VDD=20V , VGS=10V , RG=6 ID=25A --- 10 15 ns Tr Rise Time3 , 4 --- 14 21 Td(off) Turn-Off Delay Time3 , 4 --- 28 42 Tf Fall Time3 , 4 --- 20 30 Ciss Input Capacitance VDS=20V , VGS=0V , F=1MHz --- 930 1400 pF Coss Output Capacitance --- 380 570 Crss Reverse Transfer Capacitance --- 30 45 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 45 A ISM Pulsed Source Current --- --- 90 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/μs TJ=25℃ --- 45 --- ns Qrr Reverse Recovery Charge --- 35 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=36A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDC40B4Z 40V N-Channel MOSFETs 25 50 75 100 125 150 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0 2 4 6 8 10 Tc=25℃ ID=8A 0 2 4 6 8 10 VGS=3V VGS=3.3V VGS=4V VGS=10V VGS=6V VGS=4.5V VGS=3.5V VGS=3.7V VGS=4.3V 5 15 25 35 45 55 Tc=25℃ VGS=4.5V VGS=6V VGS=10V ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. T C Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. T J Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized V th vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn -On Resistance vs. VGS Fig.6 Turn -On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.02 PDC40B4Z 40V N-Channel MOSFETs Fig.12 Maximum Safe Operation Area Fig.8 Gate Charge Characteristics 0 3 6 9 12 15 ID=25A VDS=20V 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms 100 1000 0.1 1 10 Ciss Coss Crss 0 1 2 3 4 5 Tc=25℃ Tc=125℃ VDS=10V Tc=25℃ Tc=125℃ VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.11 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics ID, Drain Current (A) VGS , Gate to Source V oltage (V) Fig.9 Transfer Characteristics Fig.10 Source Current vs . VSD VSD , Source to Drain V oltage (V) IS , Source Current (A)

Potens semiconductor corp. Ver.1.02 PDC40B4Z 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.900 0.700 0.035 0.028 b 0.350 0.250 0.014 0.010 c 0.250 0.100 0.010 0.004 D 3.500 3.050 0.138 0.120 D1 3.200 2.900 0.126 0.114 D2 1.950 1.350 0.077 0.053 E 3.400 3.000 0.134 0.118 E1 3.300 2.900 0.130 0.114 E2 2.600 2.350 0.102 0.093 e 0.65BSC 0.026BSC H 0.750 0.300 0.030 0.012 L 0.600 0.300 0.024 0.012 L1 0.200 0.060 0.008 0.002 θ 14° 6° 14° 6° PPAK3x3 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.02 PDC40B4Z 40V N-Channel MOSFETs PPAK3X3 RECOMMENDED LAND PATTERN unit : mm