PDC40B4X POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Motor Drive  Power Tools  LED Lighting  Quick Charger D D D S S D S G D D D S S

Potens semiconductor corp. Ver.1.02 PDC40B4X 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=100℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=8A --- 6.3 7.6 m VGS=4.5V , ID=6A --- 10 13 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V gfs Forward Transconductance VDS=10V , IS=1A --- 5 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=20V , VGS=10V , ID=30A --- 13.7 20 nC VDS=20V , VGS=4.5V , ID=30A --- 8 12 Qgs Gate-Source Charge3 , 4 --- 2.2 5 Qgd Gate-Drain Charge3 , 4 --- 3.7 7 Td(on) Turn-On Delay Time3 , 4 VDD=20V , VGS=10V , RG=6 ID=30A --- 10 15 ns Tr Rise Time3 , 4 --- 14 21 Td(off) Turn-Off Delay Time3 , 4 --- 28 42 Tf Fall Time3 , 4 --- 20 30 Ciss Input Capacitance VDS=20V , VGS=0V , F=1MHz --- 930 1400 pF Coss Output Capacitance --- 380 570 Crss Reverse Transfer Capacitance --- 30 45 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 60 A ISM Pulsed Source Current --- --- 120 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/μs TJ=25℃ --- 45 --- ns Qrr Reverse Recovery Charge --- 35 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=36A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDC40B4X 40V N-Channel MOSFETs Fig.6 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 25 50 75 100 125 150 0 3 6 9 12 15 ID=30A VDS=20V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Normalized Thermal Response ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.02 PDC40B4X 40V N-Channel MOSFETs Fig.7 Switching Time Waveform Fig.8 EAS Waveform IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10%

Potens semiconductor corp. Ver.1.02 PDC40B4X 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION