PDC39G6BX POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Networking  Load Switch  LED applications D D D S S D S G D D D S S

Potens semiconductor corp. Ver.1.00 PDC39G6BX 30V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 30 --- --- V IDSS Drain-Source Leakage Current VDS=27V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=24V , VGS=0V , TJ=85℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=20V , VDS=0V --- --- 100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=35A --- 0.9 1.1 m VGS=4.5V , ID=25A --- 1.2 1.6 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.2 1.6 2.5 V Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=15V , VGS=10V , ID=135A --- 120 150 nC VDS=15V , VGS=4.5V , ID=135A --- 60 75 Qgs Gate-Source Charge3 , 4 --- 12.5 18 Qgd Gate-Drain Charge3 , 4 --- 17.5 25 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=6 ID=135A --- 10 15 ns Tr Rise Time3 , 4 --- 15 20 Td(off) Turn-Off Delay Time3 , 4 --- 25 30 Tf Fall Time3 , 4 --- 35 45 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 7150 8500 pF Coss Output Capacitance --- 4100 5000 Crss Reverse Transfer Capacitance --- 75 100 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.8 ---  Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=84A 352 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 270 A ISM Pulsed Source Current --- --- 540 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=112A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings Guaranteed Avalanche Energy

Potens semiconductor corp. Ver.1.00 PDC39G6BX 30V N-Channel MOSFETs 100 120 0 2 4 6 8 10 VGS=3V VGS=3.5V VGS=4V VGS=4.5V VGS=5V VGS=10V 100 150 200 250 300 25 50 75 100 125 150 0 2 4 6 8 10 Tc=25℃ ID=35A 0.3 0.6 0.9 1.2 1.5 1.8 5 20 35 50 65 Tc=25℃ VGS=10VVGS=8V VGS=6V VGS=4.5V 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDC39G6BX 30V N-Channel MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.8 Gate Charge Characteristics Fig.12 Gate Charge Waveform 100 1000 10000 0.1 1 10 Ciss Coss Crss 0 20 40 60 80 100 120 ID=135A VDS=15V 0.01 0.1 100 1000 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100μs 10μs 1ms VGS 10V / 4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDC39G6BX 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDC39G6BX 30V N-Channel MOSFETs PPAK5X6 RECOMMENDED LAND PATTERN unit : mm