PDC3908X POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D D D D G S S S  MB / VGA / Vcore  POL Applications  SMPS 2nd SR D G S

Potens semiconductor corp. Ver.1.03 PDC3908X 30V N-Channel MOSFETs Static State Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=16A --- 6.2 8.5 m VGS=4.5V , ID=8A --- 8.9 13 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=8A --- 9.5 --- S Qg Total Gate Charge3 , 4 VDS=15V , VGS=4.5V , ID=20A --- 7.5 12 nC Qgs Gate-Source Charge3 , 4 --- 4.5 8 Qgd Gate-Drain Charge3 , 4 --- 1.3 2.6 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=3.3 ID=15A --- 4.8 9 ns Tr Rise Time3 , 4 --- 12.5 24 Td(off) Turn-Off Delay Time3 , 4 --- 27.6 52 Tf Fall Time3 , 4 --- 8.2 16 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 680 1000 pF Coss Output Capacitance --- 150 220 Crss Reverse Transfer Capacitance --- 70 105 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.7 5.4  Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=15A 12 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 60 A ISM Pulsed Source Current3 --- --- 240 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=10A , di/dt=100A/µs TJ=25℃ --- 8.1 --- ns Qrr Reverse Recovery Charge --- 1.6 --- nC Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics Dynamic Characteristics Guaranteed Avalanche Energy Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=30A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.03 PDC3908X 30V N-Channel MOSFETs ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.03 PDC3908X 30V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 EAS Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.03 PDC3908X 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.800 1.000 0.032 0.039 A1 0.000 0.005 0.000 0.000 b 0.350 0.490 0.014 0.019 C 0.254 Ref 0.254 Ref D 4.900 5.100 0.193 0.200 E 5.700 5.900 0.225 0.232 e 1.27 BSC 1.27 BSC F 1.400 Ref 1.400 Ref G 0.600 Ref 0.600 Ref H 5.950 6.200 0.235 0.244 L1 0.100 0.180 0.004 0.007 K 4.000 Ref 4.000 Ref PPAK5x6 PACKAGE INFORMATION