PDC3812V POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 MB / VGA / Vcore  POL Applications  SMPS 2nd SR PPAK3X3 Dual Pin Configuration G2 S2 G1 D1 D2

Potens semiconductor corp. Ver.1.03 PDC3812V 30V Dual N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=10A --- 17 20 m VGS=4.5V , ID=6A --- 23 30 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=5V , ID=6A --- 13 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=15V , VGS=4.5V , ID=8A --- 4.1 6 nC Qgs Gate-Source Charge3 , 4 --- 1 1.4 Qgd Gate-Drain Charge3 , 4 --- 2.1 4 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=6 ID=1A --- 2.8 5 ns Tr Rise Time3 , 4 --- 7.2 14 Td(off) Turn-Off Delay Time3 , 4 --- 15.8 30 Tf Fall Time3 , 4 --- 4.6 9 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 345 500 pF Coss Output Capacitance --- 55 80 Crss Reverse Transfer Capacitance --- 32 55 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 3.2 6.4  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 20 A ISM Pulsed Source Current3 --- --- 80 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=1A di/dt=100A/µs, TJ=25℃ --- 8.37 --- ns Qrr Reverse Recovery Charge --- 2.08 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=17A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.03 PDC3812V 30V Dual N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.03 PDC3812V 30V Dual N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 EAS Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.03 PDC3812V 30V Dual N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.670 0.880 0.026 0.035 b 0.250 0.350 0.010 0.014 c 0.100 0.250 0.004 0.010 D 3.150 3.550 0.124 0.140 D1 3.000 3.300 0.118 0.130 D2 1.500 2.000 0.059 0.079 D3 0.130 0.200 0.005 0.008 E 3.100 3.500 0.122 0.138 E1 3.000 3.200 0.118 0.126 E2 2.350 2.600 0.093 0.102 e 0.650 BSC 0.026 BSC H 0.300 0.500 0.012 0.020 L 0.300 0.500 0.012 0.020 L1 0.130 REF 0.005 REF K 0.300 REF 0.012 REF θ 0° 12° 0° 12° M 0.150 REF 0.006 REF PPAK3x3 Dual PACKAGE INFORMATION