PDC3801R POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics G1 D1

Applications

PPAK5x6 Asymmetric Dual Pin Configuration  MB / VGA / Vcore  POL Buck Applications  SMPS 2nd SR G1 G2 D1 D2 S1 S2 S2 S2 S1/D2 G1 D1 D1 D1 G2 S2 S2 S2 S1/D2

Potens semiconductor corp. Ver.1.00 PDC3801R 30V N-Channel MOSFETs Static State Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA Q1 30 --- --- V Q2 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ Q1 --- --- 1 uA Q2 --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ Q1 --- --- 10 uA Q2 --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V Q1 --- --- ±100 nA Q2 --- --- ±100 nA RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=8A Q1 --- 7.5 9 mΩ VGS=10V , ID=12A Q2 --- 4.8 6 mΩ VGS=4.5V , ID=5A Q1 --- 10 13 mΩ VGS=4.5V , ID=8A Q2 --- 6.5 9 mΩ VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA Q1 1 1.6 2.5 V Q2 1 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient Q1 --- -4 --- mV/℃ Q2 --- -4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=8A Q1 --- 14 --- S VDS=10V , ID=10A Q2 --- 18 --- S Qg Total Gate Charge3 , 4 VDS=15V , VGS=4.5V , ID=20A Q1 --- 7.5 --- nC Q2 --- 11.1 --- Qgs Gate-Source Charge3 , 4 Q1 --- 1.3 --- Q2 --- 1.85 --- Qgd Gate-Drain Charge3 , 4 Q1 --- 4.5 --- Q2 --- 6.8 --- Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=3.3Ω ID=15A Q1 --- 4.8 --- ns Q2 --- 7.5 --- Tr Rise Time3 , 4 Q1 --- 12.5 --- Q2 --- 14.5 --- Td(off) Turn-Off Delay Time3 , 4 Q1 --- 27.6 --- Q2 --- 35.2 --- Tf Fall Time3 , 4 Q1 --- 8.2 --- Q2 --- 9.6 --- Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Dynamic Characteristics

Potens semiconductor corp. Ver.1.00 PDC3801R 30V N-Channel MOSFETs Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz Q1 --- 750 --- pF Q2 --- 1160 --- Coss Output Capacitance Q1 --- 150 --- Q2 --- 200 --- Crss Reverse Transfer Capacitance Q1 --- 110 --- Q2 --- 180 --- Rg Gate resistance VGS=0V, VDS=0V, F=1MHz Q1 --- 2.7 --- Ω Q2 --- 2.5 --- Ω Symbol Parameter Conditions Min. Typ. Max. Unit EAS Single Pulse Avalanche Energy VDD=25V, L=0.1mH, IAS=15A Q1 12 --- --- mJ Q2 20 --- --- mJ Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current Q1 --- --- 55 A Q2 --- --- 80 A ISM Pulsed Source Current3 Q1 --- --- 220 A Q2 --- --- 320 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ Q1 --- --- 1 V Q2 --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs TJ=25℃ Q1 --- --- --- ns Q2 --- --- --- ns Qrr Reverse Recovery Charge Q1 --- --- --- nC Q2 --- --- --- nC Drain-Source Diode Characteristics Guaranteed Avalanche Energy Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,Q1:IAS=30A,Q2:IAS=42A,RG=25Ω,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.00 PDC3801R 30V N-Channel MOSFETs Fig.1 Q1 Continuous Drain Current vs. TC Fig.3 Q1 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance (mΩ) Fig.2 Q1 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage (V) VGS , Gate to Source Voltage (V) Qg , Gate Charge (nC) Fig.4 Q1 Gate Charge Waveform Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Q1 Maximum Safe Operation Area Fig.5 Q1 Normalized Transient Impedance TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.00 PDC3801R 30V N-Channel MOSFETs ID , Continuous Drain Current (A) Normalized On Resistance (mΩ) TC , Case Temperature (℃) TJ , Junction Temperature (℃) Fig.7 Q2 Continuous Drain Current vs. TC Fig.8 Q2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage (V) TJ , Junction Temperature (℃) VGS , Gate to Source Voltage (V) Qg , Gate Charge (nC) Fig.9 Q2 Normalized Vth vs. TJ Fig.10 Q2 Gate Charge Waveform Normalized Thermal Response (RθJC) Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source Voltage (V) Fig.11 Q2 Normalized Transient Impedance Fig.12 Q2 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.00 PDC3801R 30V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.14 EAS Waveform Fig.13 Switching Time Waveform

Potens semiconductor corp. Ver.1.00 PDC3801R 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.100 0.036 0.043 b 0.330 0.510 0.013 0.020 C 0.200 0.300 0.008 0.011 C1 0.040 REF 0.040 REF D1 4.800 5.000 0.189 0.196 D2 3.610 3.960 0.143 0.155 E 5.900 6.100 0.233 0.240 E1 5.700 5.800 0.225 0.228 E2 2.020 2.420 0.080 0.095 e 1.270BSC 1.270BSC F 2.550 2.900 0.101 0.114 H 0.610 0.810 0.025 0.031 I 1.100 1.300 0.044 0.051 J 0.400 0.600 0.016 0.023 K 0.500 - 0.020 - L 0.510 0.710 0.020 0.027 L1 0.060 0.200 0.003 0.007 θ 0° 12° 0° 12° PPAK5x6 Asymmetric Dual Package Information