PDC3710V

PDC3710V POTENS

Document overview

• Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
• PDF pages: 6

Technical content

Features

Applications

 DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics PPAK3X3 Dual 2EP Pin Configuration G2 S2 G1 D2 D2 S2 S1 G2 G1 D1 D2

Potens semiconductor corp. Ver.1.02 PDC3710V 30V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- 10.8 13 m VGS=4.5V , ID=5A --- 14 18.5 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V gfs Forward Transconductance VDS=10V , ID=5A --- 6 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=15V , VGS=10V , ID=15A --- 11 17 nC Qgs Gate-Source Charge3 , 4 --- 1.4 2 Qgd Gate-Drain Charge3 , 4 --- 2.7 4.5 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=6 ID=15A --- 3.8 7 ns Tr Rise Time3 , 4 --- 10 19 Td(off) Turn-Off Delay Time3 , 4 --- 22 42 Tf Fall Time3 , 4 --- 6.6 13 Ciss Input Capacitance VDS=15V , VGS=0V , F=1MHz --- 710 1065 pF Coss Output Capacitance --- 100 150 Crss Reverse Transfer Capacitance --- 80 120 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.7 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 25 A ISM Pulsed Source Current --- --- 50 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=30V, IS=10A di/dt=100A/µs, TJ=25℃ --- 110 --- ns Qrr Reverse Recovery Charge --- 145 --- nC noted) Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=26A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.02 PDC3710V 30V N+P Dual Channel MOSFETs Fig.6 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0 3 6 9 12 ID=15A VDS=15V 25 50 75 100 125 150 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Normalized Thermal Response ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.02 PDC3710V 30V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V IDSS Drain-Source Leakage Current VDS=-30V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-8A --- 27 32 m VGS=-4.5V , ID=-5A --- 37 48 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.5 -2.5 V gfs Forward Transconductance VDS=-10V , ID=-3A --- 5 --- S Dynamic and switching Characteristics Qg Total Gate Charge7,8 VDS=-15V , VGS=-10V , ID=-10A --- 11 17 nC Qgs Gate-Source Charge7,8 --- 1.5 2.5 Qgd Gate-Drain Charge7,8 --- 2.5 4 Td(on) Turn-On Delay Time7,8 VDD=-15V , VGS=-10V , RG=6 ID=-10A --- 4 6 ns Tr Rise Time7,8 --- 12.8 20 Td(off) Turn-Off Delay Time7,8 --- 23 35 Tf Fall Time7,8 --- 6.7 10 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 800 1200 pF Coss Output Capacitance --- 110 165 Crss Reverse Transfer Capacitance --- 75 115 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 16 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -17 A ISM Pulsed Source Current --- --- -34 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-30V, IS=-10A di/dt=100A/µs, TJ=25℃ --- 140 --- ns Qrr Reverse Recovery Charge --- 205 --- nC Note : 5. Repetitive Rating : Pulsed width limited by maximum junction temperature. 6. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-24.5A.,RG=25,Starting TJ=25℃ 7. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 8. Essentially independent of operating temperature. noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDC3710V 30V N+P Dual Channel MOSFETs Fig.12 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0 3 6 9 12 ID=-10A VDS=-15V 25 50 75 100 125 150 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100us 10us 1ms -ID , Continuous Drain Current (A) Fig.7 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.8 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.9 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.10 Gate Charge Waveform Fig.11 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) Normalized Thermal Response -ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.02 PDC3710V 30V N+P Dual Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.670 0.880 0.026 0.035 b 0.250 0.350 0.010 0.014 c 0.100 0.250 0.004 0.010 D 3.150 3.550 0.124 0.140 D1 3.000 3.300 0.118 0.130 D2 1.500 2.000 0.059 0.079 D3 0.130 0.200 0.005 0.008 E 3.100 3.500 0.122 0.138 E1 3.000 3.200 0.118 0.126 E2 2.350 2.600 0.093 0.102 e 0.650 BSC 0.026 BSC H 0.300 0.500 0.012 0.020 L 0.300 0.500 0.012 0.020 L1 0.130 REF 0.005 REF K 0.300 REF 0.012 REF θ 0° 12° 0° 12° M 0.150 REF 0.006 REF PPAK3x3 Dual PACKAGE INFORMATION