PDC3701T POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology PPAK5x6 Dual Pin Configuration G2 S2 G1 S2 S1 D1 D2

Potens semiconductor corp. Ver.1.02 PDC3701T 30V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=10A --- 9.4 12 m VGS=4.5V , ID=5A --- 13 18 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.5 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=5V , ID=5A --- 6.4 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=15V , VGS=4.5V , ID=5A --- 7.4 12 nC Qgs Gate-Source Charge3 , 4 --- 2.3 5 Qgd Gate-Drain Charge3 , 4 --- 3 6 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=6 ID=1A --- 3.8 7 ns Tr Rise Time3 , 4 --- 10 19 Td(off) Turn-Off Delay Time3 , 4 --- 22 42 Tf Fall Time3 , 4 --- 6.6 13 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 620 900 pF Coss Output Capacitance --- 85 125 Crss Reverse Transfer Capacitance --- 60 90 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.8 5.6  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 23.3 A ISM Pulsed Source Current --- --- 46.6 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V noted) Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,IAS=28A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.02 PDC3701T 30V N+P Dual Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Fig.4 Gate Charge Waveform Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.02 PDC3701T 30V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=-30V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-24V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-7A --- 24 29 m VGS=-4.5V , ID=-4A --- 35 46 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.6 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- 4 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-3A --- 5.4 --- S Dynamic and switching Characteristics Qg Total Gate Charge7,8 VDS=-15V , VGS=-4.5V , ID=-5A --- 8 15 nC Qgs Gate-Source Charge7,8 --- 3.3 6 Qgd Gate-Drain Charge7,8 --- 2.3 5 Td(on) Turn-On Delay Time7,8 VDD=-15V , VGS=-10V , RG=6 ID=-1A --- 4.6 9 ns Tr Rise Time7,8 --- 14 26 Td(off) Turn-Off Delay Time7,8 --- 34 58 Tf Fall Time7,8 --- 18 35 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 757 1280 pF Coss Output Capacitance --- 122 210 Crss Reverse Transfer Capacitance --- 88 175 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -15.2 A ISM Pulsed Source Current --- --- -30.4 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 5. Repetitive Rating : Pulsed width limited by maximum junction temperature. 6. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-28A.,RG=25,Starting TJ=25℃ 7. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 8. Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDC3701T 30V N+P Dual Channel MOSFETs Normalized Gate Threshold V oltage Fig.9 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Fig.10 Gate Charge Waveform Normalized Thermal Response Fig.11 Normalized Transient Impedance -ID , Continuous Drain Current (A) Fig.12 Maximum Safe Operation Area -ID , Continuous Drain Current (A) Fig.7 Continuous Drain Current vs. TC Normalized On Resistance Fig.8 Normalized RDSON vs. TJ TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.02 PDC3701T 30V N+P Dual Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.800 1.200 0.031 0.047 b 0.300 0.510 0.012 0.020 C 0.250 Ref 0.010 Ref D 4.800 5.400 0.189 0.213 E 5.450 5.960 0.215 0.235 E1 3.200 3.800 0.126 0.150 e 1.27 BSC 0.050 BSC F 1.000 1.900 0.039 0.075 G 0.380 0.800 0.015 0.031 H 5.850 6.300 0.230 0.248 L1 0.050 0.250 0.002 0.010 K 1.500 1.900 0.059 0.074 PPAK5x6 Dual PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.02 PDC3701T 30V N+P Dual Channel MOSFETs PPAK5X6 Dual RECOMMENDED LAND PATTERN unit : mm