PDC2601X POTENS

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D G S  Notebook  Load Switch  Networking  Hand-Held Instruments D D D S S D S G D D D S S D G S

Potens semiconductor corp. Ver.1.01 PDC2601X 20V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.008 --- V/℃ IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=125℃ --- --- -30 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±500 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.4 -0.6 -1.0 V △VGS VGS(th) Temperature Coefficient --- -3.44 --- mV/℃ gfs Forward Transconductance VDS=-10V , IS=-3A --- 30 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-16V , VGS=-4.5V , ID=-5A --- 149 225 nC Qgs Gate-Source Charge2 , 3 --- 14.4 22 Qgd Gate-Drain Charge2 , 3 --- 42.8 65 Td(on) Turn-On Delay Time2 , 3 VDD=-15V , VGS=-4.5V , RG=25 ID=-1A --- 21.2 42 nS Tr Rise Time2 , 3 --- 20.6 40 Td(off) Turn-Off Delay Time2 , 3 --- 26 52 Tf Fall Time2 , 3 --- 400 600 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 14000 21000 pF Coss Output Capacitance --- 1670 2500 Crss Reverse Transfer Capacitance --- 730 1100 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.6 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -90 A ISM Pulsed Source Current --- --- -180 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDC2601X 20V P-Channel MOSFETs -ID , Continuous Drain Current (A) Normalized On Resistance Fig.1 Continuous Drain Current vs. TC Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response Fig.5 Normalized Transient Response -ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area TC , Case Temperature (℃) TJ , Junction Temperature (℃) -VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s) Qg , Gate Charge (nC) TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.01 PDC2601X 20V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff -VDS -VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.01 PDC2601X 20V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION