PDC2305Z POTENS

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D G S  Notebook  Load Switch  Networking  Hand-Held Instruments D D D S S D G S

Potens semiconductor corp. Ver.1.01 PDC2305Z 20V P-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.01 --- V/℃ IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-6A --- 12 15 m VGS=-2.5V , ID=-4A --- 15 20 VGS=-1.8V , ID=-3A --- 20 26 VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.3 -0.6 -1.0 V △VGS(th) VGS(th) Temperature Coefficient --- 3 --- mV/℃ gfs Forward Transconductance VDS=-10V , IS=-6A --- 20 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-10V , VGS=-4.5V , ID=-6A --- 27 40 nC Qgs Gate-Source Charge2 , 3 --- 2.4 4.8 Qgd Gate-Drain Charge2 , 3 --- 5.3 8 Td(on) Turn-On Delay Time2 , 3 VDD=-10V , VGS=-4.5V , RG=25 ID=-1A --- 16.2 31 nS Tr Rise Time2 , 3 --- 43.5 83 Td(off) Turn-Off Delay Time2 , 3 --- 114 217 Tf Fall Time2 , 3 --- 28.8 55 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 2320 3370 pF Coss Output Capacitance --- 280 410 Crss Reverse Transfer Capacitance --- 175 260 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -11 A ISM Pulsed Source Current --- --- -44 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDC2305Z 20V P-Channel MOSFETs -ID , Continuous Drain Current (A) Normalized On Resistance TC , Case Temperature (℃) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) Fig.5 Normalized Transient Response -ID , Continuous Drain Current (A) -VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.01 PDC2305Z 20V P-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff -VDS -VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.01 PDC2305Z 20V P-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 0.900 0.700 0.035 0.028 b 0.350 0.250 0.014 0.010 c 0.250 0.100 0.010 0.004 D 3.500 3.050 0.138 0.120 D1 3.200 2.900 0.126 0.114 D2 1.950 1.350 0.077 0.053 E 3.400 3.000 0.134 0.118 E1 3.300 2.900 0.130 0.114 E2 2.600 2.350 0.102 0.093 e 0.65BSC 0.026BSC H 0.750 0.300 0.030 0.012 L 0.600 0.300 0.024 0.012 L1 0.200 0.060 0.008 0.002 θ 14° 6° 14° 6° PPAK3x3 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.01 PDC2305Z 20V P-Channel MOSFETs PPAK3X3 RECOMMENDED LAND PATTERN unit : mm