PDC2207CV POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 MB / VGA / Vcore  POL Applications  Networking PPAK3X3 Dual 2EP Pin Configuration G2 S2 G1 D2 D2 S2 S1 G2 G1 D1 D2

Potens semiconductor corp. Ver.1.00 PDC2207CV 20V P-Channel Dual MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -20 --- --- V IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance2 VGS=-1.8V , ID=-2A --- 26 34 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -0.3 -0.6 -1 V gfs Forward Transconductance VDS=-10V , ID=-3A --- 9 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=-10V , VGS=-4.5V , ID=-10A --- 19.5 30 nC Qgs Gate-Source Charge2 , 3 --- 2 4 Qgd Gate-Drain Charge2 , 3 --- 3.6 7 Td(on) Turn-On Delay Time2 , 3 VDD=-10V , VGS=-4.5V , RG=6 ID=-10A --- 8 12 ns Tr Rise Time2 , 3 --- 12 20 Td(off) Turn-Off Delay Time2 , 3 --- 20 30 Tf Fall Time2 , 3 --- 25 40 Ciss Input Capacitance VDS=-15V , VGS=0V , F=1MHz --- 1670 2430 pF Coss Output Capacitance --- 220 320 Crss Reverse Transfer Capacitance --- 120 180 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -25 A ISM Pulsed Source Current2 --- --- -50 A VSD Diode Forward Voltage2 VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDC2207CV 20V P-Channel Dual MOSFETs 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0 2 4 6 8 10 VGS=-1.8V VGS=-2V VGS=-2.7V VGS=-2.5V VGS=-2.3V 25 50 75 100 125 150 0 2 4 6 8 10 Tc=25℃ ID=-4A 2 6 10 14 18 22 Tc=25℃ VGS=-4.5V VGS=-2.5V VGS=-1.8V -ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics -ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) -VDS ,Drain to Source V oltage (V) -VGS , Gate to Source V oltage (V) -ID , Drain Current (A)

Potens semiconductor corp. Ver.1.00 PDC2207CV 20V P-Channel Dual MOSFETs Fig.10 Maximum Safe Operation Area Fig.11 Switching Time Waveform Fig.12 Gate Charge Waveform Fig.8 Gate Charge Characteristics -VGS -10V / -4.5V Qg QgdQgs Gate Charge Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 100 0.1 1 10 TC=25℃ DC 100ms 10ms 100us 10us 1ms 0.9 1.8 2.7 3.6 4.5 0 4 8 12 16 20 ID=-10A VDS=-10V 100 1000 0.1 1 10 Ciss Coss Crss -VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response -VGS , Gate to Source V oltage (V) (mohm) Fig.9 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) -ID , Continuous Drain Current (A) Capacitance (pF) Fig.7 Capacitance Characteristics

Potens semiconductor corp. Ver.1.00 PDC2207CV 20V P-Channel Dual MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.670 0.880 0.026 0.035 b 0.250 0.350 0.010 0.014 c 0.100 0.250 0.004 0.010 D 3.150 3.550 0.124 0.140 D1 3.000 3.300 0.118 0.130 D2 1.500 2.000 0.059 0.079 D3 0.130 0.200 0.005 0.008 E 3.100 3.500 0.122 0.138 E1 3.000 3.200 0.118 0.126 E2 2.350 2.600 0.093 0.102 e 0.650 BSC 0.026 BSC H 0.300 0.500 0.012 0.020 L 0.300 0.500 0.012 0.020 L1 0.130 REF 0.005 REF K 0.300 REF 0.012 REF θ 0° 12° 0° 12° M 0.150 REF 0.006 REF PPAK3x3 Dual PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.00 PDC2207CV 20V P-Channel Dual MOSFETs unit : mm PPAK3X3 Dual RECOMMENDED LAND PATTERN