PDC0986BHX POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Networking  Load Switch  LED applications  Quick Charger D D D S S D S G D D D S S

Potens semiconductor corp. Ver.1.02 PDC0986BHX 100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250μA 100 --- --- V IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 μA VDS=80V , VGS=0V , TJ=85℃ --- --- 10 μA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=12A --- 19 23 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250μA 2 3 4 V gfs Forward Transconductance VDS=10V , ID=3A --- 7 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=50V , VGS=10V , ID=15A --- 9 15 nC Qgs Gate-Source Charge3 , 4 --- 2 5 Qgd Gate-Drain Charge3 , 4 --- 4 6 Td(on) Turn-On Delay Time3 , 4 VDD=50V , VGS=10V , RG=6 ID=15A --- 20 30 ns Tr Rise Time3 , 4 --- 30 45 Td(off) Turn-Off Delay Time3 , 4 --- 55 70 Tf Fall Time3 , 4 --- 30 45 Ciss Input Capacitance VDS=50V , VGS=0V , F=1MHz --- 660 1000 pF Coss Output Capacitance --- 135 200 Crss Reverse Transfer Capacitance --- 5 8 Rg Gate Resistance VGS=0V , VDS=0V , F=1MHz --- 0.8 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 35 A ISM Pulsed Source Current --- --- 70 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Trr Reverse Recovery Time VR=100V, IS=10A , di/dt=100A/μs , TJ=25℃ --- 140 --- ns Qrr Reverse Recovery Charge --- 220 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDC0986BHX 100V N-Channel MOSFETs 25 50 75 100 125 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.5 1.5 2.5 -50 0 50 100 150 0 2 4 6 8 10 VGS=4.3V VGS=4.7V VGS=5V VGS=5.3V VGS=5.7V VGS=6V 5 10 15 20 25 30 Tc=25℃ VGS=8V VGS=10V 2 4 6 8 10 Tc=25℃ ID=12A ID , Continuous Drain Current (A) Fig.1 Typical Output Characteristics ID , Continuous Drain Current (A) TC , Case Temperature (℃) Fig.2 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.4 Normalized Vth vs. TJ RDS(ON) , Turn-On Resistance (mohm) Fig.5 Turn-On Resistance vs. VGS Fig.6 Turn-On Resistance vs. ID RDS(ON) , Turn-On Resistance (mohm) VDS ,Drain to Source V oltage (V) VGS , Gate to Source V oltage (V) ID , Drain Current (A)

Potens semiconductor corp. Ver.1.02 PDC0986BHX 100V N-Channel MOSFETs Fig.8 Gate Charge Characteristics Fig.11 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms 100 1000 0.1 1 10 100 Ciss Coss Crss 0 2 4 6 8 10 ID=15A VDS=50V 0 25 50 75 100 125 150 VDS , Drain to Source V oltage (V) Qg , Gate Charge (nC) VGS , Gate to Source V oltage (V) (mohm) Capacitance (pF) Fig.7 Capacitance Characteristics Normalized Thermal Response Fig.10 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) ID , Continuous Drain Current (A) Fig.9 Power Dissipation vs. TC TC , Case Temperature (℃) Power Dissipation (W)

Potens semiconductor corp. Ver.1.02 PDC0986BHX 100V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.02 PDC0986BHX 100V N-Channel MOSFETs PPAK5X6 RECOMMENDED LAND PATTERN unit : mm