PDC0902X POTENS

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D G S D G S  Networking  Load Switch  LED applications  Quick Charger D D D S S D S G D D D S S

Potens semiconductor corp. Ver.1.02 PDC0902X 100V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.05 --- V/℃ IDSS Drain-Source Leakage Current VDS=80V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=15A --- 11 13 m VGS=6V , ID=10A --- 11.5 14 m VGS=4.5V , ID=8A --- 12.5 18 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1 2 3 V △VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=3A --- 10 --- S Dynamic and switching Characteristics Qg Total Gate Charge3 , 4 VDS=80V , VGS=4.5V , ID=10A --- 47.2 85 nC Qgs Gate-Source Charge3 , 4 --- 15.6 30 Qgd Gate-Drain Charge3 , 4 --- 26.8 52 Td(on) Turn-On Delay Time3 , 4 VDD=50V , VGS=10V , RG=6 ID=1A --- 35 70 ns Tr Rise Time3 , 4 --- 23 46 Td(off) Turn-Off Delay Time3 , 4 --- 67 135 Tf Fall Time3 , 4 --- 38 76 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 5775 8500 pF Coss Output Capacitance --- 317 460 Crss Reverse Transfer Capacitance --- 115 180 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.2 2.4  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 60 A ISM Pulsed Source Current --- --- 120 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=50V,VGS=10V,L=0.1mH,IAS=64A.,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDC0902X 100V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized On Resistance TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ Normalized Gate Threshold V oltage Fig.4 Gate Charge Characteristics VGS , Gate to Source V oltage (V) Fig.5 Normalized Transient Impedance Qg , Gate Charge (nC) Fig.6 Maximum Safe Operation Area TC , Case Temperature (℃) Normalized Thermal Response Square Wave Pulse Duration (s) ID , Drain Current (A) VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.02 PDC0902X 100V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform

Potens semiconductor corp. Ver.1.02 PDC0902X 100V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.200 0.850 0.047 0.031 b 0.510 0.300 0.020 0.012 C 0.300 0.200 0.012 0.008 D1 5.400 4.800 0.212 0.189 D2 4.310 3.610 0.170 0.142 E 6.300 5.850 0.248 0.230 E1 5.960 5.450 0.235 0.215 E2 3.920 3.300 0.154 0.130 e 1.27BSC 0.05BSC H 0.650 0.380 0.026 0.015 L 0.710 0.380 0.028 0.015 L1 0.250 0.050 0.009 0.002 θ 12° 0° 12° 0° PPAK5x6 PACKAGE INFORMATION