PDC0810T POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 6

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics D1 D1 G1 S1

Applications

 Networking  Load Switch  LED applications PPAK5x6 Dual Pin Configuration G1 G2 D1 D2 S1 S2

Potens semiconductor corp. Ver.1.01 PDC0810T 100V Dual N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.10 --- V/℃ IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=4A --- 145 185 m VGS=4.5V , ID=2A --- 150 195 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=1A --- 5 --- S Qg Total Gate Charge2 , 3 VDS=50V , VGS=10V , ID=2A --- 13.4 21 nC Qgs Gate-Source Charge2 , 3 --- 2.9 6 Qgd Gate-Drain Charge2 , 3 --- 1.7 4 Td(on) Turn-On Delay Time2 , 3 VDD=30V, VGS=10V , RG=3.3 ID=1A --- 1.6 3 ns Tr Rise Time2 , 3 --- 6.6 13 Td(off) Turn-Off Delay Time2 , 3 --- 11.5 22 Tf Fall Time2 , 3 --- 3.6 7 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 820 1190 pF Coss Output Capacitance --- 35 55 Crss Reverse Transfer Capacitance --- 20 30 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.3 2.6  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 10 A ISM Pulsed Source Current2 --- --- 20 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Drain-Source Diode Characteristics Dynamic Characteristics On Characteristics

Potens semiconductor corp. Ver.1.01 PDC0810T 100V Dual N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Impedance TJ , Junction Temperature (℃) Qg , Gate Charge (nC) VDS , Drain to Source V oltage (V) Square Wave Pulse Duration (s) TC , Case Temperature (℃) TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.01 PDC0810T 100V Dual N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 EAS Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.01 PDC0810T 100V Dual N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.800 1.200 0.031 0.047 b 0.300 0.510 0.012 0.020 C 0.250 Ref 0.010 Ref D 4.800 5.400 0.189 0.213 E 5.450 5.960 0.215 0.235 E1 3.200 3.800 0.126 0.150 e 1.27 BSC 0.050 BSC F 1.000 1.900 0.039 0.075 G 0.380 0.800 0.015 0.031 H 5.850 6.300 0.230 0.248 L1 0.050 0.250 0.002 0.010 K 1.500 1.900 0.059 0.074 PPAK5x6 Dual PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.01 PDC0810T 100V Dual N-Channel MOSFETs PPAK5X6 Dual RECOMMENDED LAND PATTERN unit : mm