PDC0744T POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 DC Fan  Motor Drive Applications  Networking  Half / Full Bridge Topology PPAK5x6 Dual Pin Configuration G2 S2 G1 S2 S1 D1 D2

Potens semiconductor corp. Ver.1.02 PDC0744T 100V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.04 --- V/℃ IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=80V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=4A --- 140 168 m VGS=4.5V , ID=3A --- 145 188 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.9 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=3A --- 6 --- S Dynamic and switching Characteristics Qg Total Gate Charge4 , 5 VDS=80V , VGS=10V , ID=10A --- 14.5 21.8 nC Qgs Gate-Source Charge4 , 5 --- 4.8 7.2 Qgd Gate-Drain Charge4 , 5 --- 2 3 Td(on) Turn-On Delay Time4 , 5 VDD=80V , VGS=10V , RG=6 ID=10A --- 5 --- ns Tr Rise Time4 , 5 --- 25 --- Td(off) Turn-Off Delay Time4 , 5 --- 22 --- Tf Fall Time4 , 5 --- 8 --- Ciss Input Capacitance VDS=80V , VGS=0V , F=1MHz --- 1026 1500 pF Coss Output Capacitance --- 21.8 33 Crss Reverse Transfer Capacitance --- 15.2 23 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.7 ---  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 10 A ISM Pulsed Source Current --- --- 20 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VR=100V, IS=10A , di/dt=100A/μs , TJ=25℃ --- 24.5 --- ns Qrr Reverse Recovery Charge --- 65 --- nC Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Pw ≦ 1s, Limited only by maximum temperature allowed. 2. Repetitive Rating : Pulsed width limited by maximum junction temperature. 3. VDD=25V,VGS=10V,L=0.1mH,IAS=10A.,RG=25,Starting TJ=25℃. 4. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 5. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.02 PDC0744T 100V N+P Dual Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Normalized Thermal Response ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Fig.4 Gate Charge Waveform Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.02 PDC0744T 100V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- 0.02 --- V/℃ IDSS Drain-Source Leakage Current VDS=-100V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-80V , VGS=0V , TJ=125℃ --- --- -10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-10V , ID=-3A --- 250 300 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250uA -1.2 -1.5 -2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -4.4 --- mV/℃ gfs Forward Transconductance VDS=-10V , ID=-3A --- 6 --- S Dynamic and switching Characteristics Qg Total Gate Charge8,9 VDS=-80V , VGS=-10V , ID=-5A --- 11.7 17 nC Qgs Gate-Source Charge8,9 --- 1.6 2.4 Qgd Gate-Drain Charge8,9 --- 2.9 4.4 Td(on) Turn-On Delay Time8,9 VDD=-80V , VGS=-10V , RG=6 ID=-3A --- 11.6 --- ns Tr Rise Time8,9 --- 4.8 --- Td(off) Turn-Off Delay Time8,9 --- 35.8 --- Tf Fall Time8,9 --- 18.8 --- Ciss Input Capacitance VDS=-80V , VGS=0V , F=1MHz --- 755 1130 pF Coss Output Capacitance --- 24 36 Crss Reverse Transfer Capacitance --- 17.6 26 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -8 A ISM Pulsed Source Current --- --- -16 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V trr Reverse Recovery Time VR=-100V, IS=-5A , di/dt=100A/μs , TJ=25℃ --- 23 --- ns Qrr Reverse Recovery Charge --- 22 --- nC Note : 6. Repetitive Rating : Pulsed width limited by maximum junction temperature. 7. VDD=-25V,VGS=-10V,L=0.1mH,IAS=-19A.,RG=25,Starting TJ=25℃ 8. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 9. Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDC0744T 100V N+P Dual Channel MOSFETs Normalized Gate Threshold V oltage Fig.9 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Fig.10 Gate Charge Waveform Normalized Thermal Response Fig.11 Normalized Transient Impedance -ID , Continuous Drain Current (A) Fig.12 Maximum Safe Operation Area -ID , Continuous Drain Current (A) Fig.7 Continuous Drain Current vs. TC Normalized On Resistance Fig.8 Normalized RDSON vs. TJ TC , Case Temperature (℃) TJ , Junction Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.02 PDC0744T 100V N+P Dual Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.800 1.200 0.031 0.047 b 0.300 0.510 0.012 0.020 C 0.250 Ref 0.010 Ref D 4.800 5.400 0.189 0.213 E 5.450 5.960 0.215 0.235 E1 3.200 3.800 0.126 0.150 e 1.27 BSC 0.050 BSC F 1.000 1.900 0.039 0.075 G 0.380 0.800 0.015 0.031 H 5.850 6.300 0.230 0.248 L1 0.050 0.250 0.002 0.010 K 1.500 1.900 0.059 0.074 PPAK5x6 Dual PACKAGE INFORMATION