PDC02N15V POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 Networking  Load switch  LED applications PPAK3X3 Dual Pin Configuration G2 S2 G1 D1 D2

Potens semiconductor corp. Ver.1.01 PDC02N15V 150V Dual N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 150 --- --- V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=120V , VGS=0V , TJ=125℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=1A --- 380 480 m VGS=6V , ID=0.5A --- 410 520 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.2 1.8 2.5 V gfs Forward Transconductance VDS=10V , ID=1A --- 1.7 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=75V , VGS=10V , ID=1A --- 8.1 16 nC Qgs Gate-Source Charge2 , 3 --- 2 4 Qgd Gate-Drain Charge2 , 3 --- 2.7 5.4 Td(on) Turn-On Delay Time2 , 3 VDD=75V , VGS=10V , RG=10 ID=1A --- 8.2 16 ns Tr Rise Time2 , 3 --- 5.8 12 Td(off) Turn-Off Delay Time2 , 3 --- 14.8 28 Tf Fall Time2 , 3 --- 8 16 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 350 700 pF Coss Output Capacitance --- 34 68 Crss Reverse Transfer Capacitance --- 26 52 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2 4  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 2 A ISM Pulsed Source Current2 --- --- 4 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V trr Reverse Recovery Time VGS=0V,IS=1A , di/dt=100A/µs TJ=25℃ --- 43 --- ns Qrr Reverse Recovery Charge --- 37 --- nC Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.01 PDC02N15V 150V Dual N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TC Fig.3 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.01 PDC02N15V 150V Dual N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.8 EAS Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.01 PDC02N15V 150V Dual N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.670 0.880 0.026 0.035 b 0.250 0.350 0.010 0.014 c 0.100 0.250 0.004 0.010 D 3.150 3.550 0.124 0.140 D1 3.000 3.300 0.118 0.130 D2 1.500 2.000 0.059 0.079 D3 0.130 0.200 0.005 0.008 E 3.100 3.500 0.122 0.138 E1 3.000 3.200 0.118 0.126 E2 2.350 2.600 0.093 0.102 e 0.650 BSC 0.026 BSC H 0.300 0.500 0.012 0.020 L 0.300 0.500 0.012 0.020 L1 0.130 REF 0.005 REF K 0.300 REF 0.012 REF θ 0° 12° 0° 12° M 0.150 REF 0.006 REF PPAK3x3 Dual PACKAGE INFORMATION

Potens semiconductor corp. Ver.1.01 PDC02N15V 150V Dual N-Channel MOSFETs PPAK3X3 Dual RECOMMENDED LAND PATTERN unit : mm