PDB3810H POTENS

Document overview

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Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics S2 G2 G1 D1

Applications

DFN3x3 Asymmetric Dual Pin Configuration  MB / VGA / Vcore  POL Buck Applications  SMPS 2nd SR G1 G2 D1 D2 S1 S2 D1 D1 S2 S2 G1 D1 D1 D1 G2 S2 S2 S2 S1/D2

Potens semiconductor corp. Ver.1.05 PDB3810H 30V N-Channel MOSFETs Static State Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA Q1 30 --- --- V Q2 30 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA IDSS Drain-Source Leakage Current VDS=30V , VGS=0V , TJ=25℃ Q1 --- --- 1 uA Q2 --- --- 1 uA VDS=24V , VGS=0V , TJ=125℃ Q1 --- --- 10 uA Q2 --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V Q1 --- --- ±100 nA Q2 --- --- ±100 nA RDS(ON) Static Drain-Source On-Resistance3 VGS=10V , ID=10A Q1 --- 8.5 10.5 m VGS=10V , ID=10A Q2 --- 8.5 10.5 m VGS=4.5V , ID=5A Q1 --- 11 14 m VGS=4.5V , ID=5A Q2 --- 11 14 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA Q1 1.2 1.6 2.5 V Q2 1.2 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient Q1 --- -4 --- mV/℃ Q2 --- -4 --- mV/℃ gfs Forward Transconductance VDS=5V , ID=5A Q1 --- 12 --- S VDS=5V , ID=5A Q2 --- 12 --- S Qg Total Gate Charge3 , 4 VDS=15V , VGS=10V , ID=5A Q1 --- 15.6 31 nC Q2 --- 15.6 31 Qgs Gate-Source Charge3 , 4 Q1 --- 2.3 5 Q2 --- 2.3 5 Qgd Gate-Drain Charge3 , 4 Q1 --- 3 6 Q2 --- 3 6 Td(on) Turn-On Delay Time3 , 4 VDD=15V , VGS=10V , RG=6 ID=1A Q1 --- 3.8 7 ns Q2 --- 3.8 7 Tr Rise Time3 , 4 Q1 --- 10 19 Q2 --- 10 19 Td(off) Turn-Off Delay Time3 , 4 Q1 --- 22 42 Q2 --- 22 42 Tf Fall Time3 , 4 Q1 --- 6.6 13 Q2 --- 6.6 13 Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Dynamic Characteristics

Potens semiconductor corp. Ver.1.05 PDB3810H 30V N-Channel MOSFETs Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz Q1 --- 620 900 pF Q2 --- 620 900 Coss Output Capacitance Q1 --- 85 125 Q2 --- 85 125 Crss Reverse Transfer Capacitance Q1 --- 60 90 Q2 --- 60 90 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz Q1 --- 2.8 5.6  Q2 --- 2.8 5.6  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current Q1 --- --- 19.5 A Q2 --- --- 19.5 A ISM Pulsed Source Current3 Q1 --- --- 39 A Q2 --- --- 39 A VSD Diode Forward Voltage3 VGS=0V , IS=1A , TJ=25℃ Q1 --- --- 1 V Q2 --- --- 1 V Drain-Source Diode Characteristics Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. VDD=25V,VGS=10V,L=0.1mH,Q1:IAS=16A,Q2:IAS=16A,RG=25,Starting TJ=25℃. 3. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 4. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.05 PDB3810H 30V N-Channel MOSFETs Fig.1 Q1 Continuous Drain Current vs. TC Fig.3 Q1 Normalized Vth vs. TJ TC , Case Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Q1 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Q1 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Q1 Maximum Safe Operation Area Fig.5 Q1 Normalized Transient Impedance TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.05 PDB3810H 30V N-Channel MOSFETs ID , Continuous Drain Current (A) Normalized On Resistance TC , Case Temperature (℃) TJ , Junction Temperature (℃) Fig.7 Q2 Continuous Drain Current vs. TC Fig.8 Q2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.9 Q2 Normalized Vth vs. TJ Fig.10 Q2 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.11 Q2 Normalized Transient Impedance Fig.12 Q2 Maximum Safe Operation Area

Potens semiconductor corp. Ver.1.05 PDB3810H 30V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.14 EAS Waveform Fig.13 Switching Time Waveform

Potens semiconductor corp. Ver.1.05 PDB3810H 30V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches Max Min Max Min A 0.900 0.700 0.035 0.028 B 0.400 0.250 0.016 0.010 C 0.255 0.150 0.010 0.006 D 3.100 2.900 0.122 0.114 E 3.100 2.900 0.122 0.114 e 0.700 0.600 0.028 0.024 F 0.450 0.250 0.018 0.010 H 1.100 0.850 0.043 0.033 H1 0.650 0.400 0.026 0.016 I 0.450 0.250 0.018 0.010 J 0.350 0.150 0.014 0.006 K 0.350 0.150 0.014 0.006 L 2.500 2.300 0.098 0.091 DFN3x3 Asymmetric Dual Package Information e C D E A F J I K B H L

Potens semiconductor corp. Ver.1.05 PDB3810H 30V N-Channel MOSFETs RECOMMENDED LAND PATTERN DFN3X3 (Asymmetric Dual)