PDB2114S POTENS

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 Notebook  Load Switch  Networking  Hand-held Instruments Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics DFN2X2-6L Dual 2EP Pin Configuration G S1 G1 G2 ˙ D1 Pin1

Potens semiconductor corp. Ver.1.02 PDB2114S 20V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 20 --- --- V IDSS Drain-Source Leakage Current VDS=20V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=16V , VGS=0V , TJ=125℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=4.5V , ID=2A --- 18 22 m VGS=2.5V , ID=1.5A --- 23 30 m VGS=1.8V , ID=1 A 31 40 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 0.4 0.6 1 V gfs Forward Transconductance VDS=10V , ID=1A --- 4 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=10V , VGS=4.5V , ID=3A --- 5.3 8 nC Qgs Gate-Source Charge2 , 3 --- 0.5 2 Qgd Gate-Drain Charge2 , 3 --- 1.8 3 Td(on) Turn-On Delay Time2 , 3 VDD=10V , VGS=4.5V , RG=6 ID=3A --- 4.1 6.2 ns Tr Rise Time2 , 3 --- 11.6 18 Td(off) Turn-Off Delay Time2 , 3 --- 23.9 36 Tf Fall Time2 , 3 --- 7.6 12 Ciss Input Capacitance VDS=10V , VGS=0V , F=1MHz --- 490 750 pF Coss Output Capacitance --- 90 140 Crss Reverse Transfer Capacitance --- 70 120 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 6 A ISM Pulsed Source Current --- --- 12 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Drain-Source Diode Characteristics and Maximum Ratings Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3. Essentially independent of operating temperature.

Potens semiconductor corp. Ver.1.02 PDB2114S 20V N+P Dual Channel MOSFETs Fig.6 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 1.2 2.4 3.6 4.8 25 50 75 100 125 150 0.9 1.8 2.7 3.6 4.5 0 1.2 2.4 3.6 4.8 6 ID=3A VDS=10V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Fig.5 Normalized Transient Impedance Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V) Normalized Thermal Response ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.02 PDB2114S 20V N+P Dual Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250µA -20 --- --- V IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 µA VDS=-16V , VGS=0V , TJ=125℃ --- --- -10 µA IGSS Gate-Source Leakage Current VGS=±10V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=-2.5V , ID=-1A --- 54 70 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =-250µA -0.4 -0.6 -1.0 V gfs Forward Transconductance VDS=-10V , ID=-1A --- 4 --- S Dynamic and switching Characteristics Qg Total Gate Charge4 , 5 VDS=-10V , VGS=-4.5V , ID=-2A --- 6.4 9 nC Qgs Gate-Source Charge4 , 5 --- 0.9 1.5 Qgd Gate-Drain Charge4 , 5 --- 1.6 3 Td(on) Turn-On Delay Time4 , 5 VDD=-10V , VGS=-4.5V , RG=6 ID=-2A --- 5 9 ns Tr Rise Time4 , 5 --- 17.4 33 Td(off) Turn-Off Delay Time4 , 5 --- 40.7 80 Tf Fall Time4 , 5 --- 11.4 23 Ciss Input Capacitance VDS=-10V , VGS=0V , F=1MHz --- 540 810 pF Coss Output Capacitance --- 80 120 Crss Reverse Transfer Capacitance --- 75 115 Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- -4 A ISM Pulsed Source Current --- --- -8 A VSD Diode Forward Voltage VGS=0V , IS=-1A , TJ=25℃ --- --- -1 V Note : 4. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 5. Essentially independent of operating temperature. Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDB2114S 20V N+P Dual Channel MOSFETs Fig.12 Maximum Safe Operation Area 0.01 0.1 NOTES: DUTY FACTOR: D = t1/t2SINGLE PULSE 0.5 0.2 0.1 0.05 0.02 0.01 0.5 1.5 2.5 -50 0 50 100 150 0.4 0.6 0.8 1.2 1.4 -50 0 50 100 150 0.8 1.6 2.4 3.2 25 50 75 100 125 150 0.9 1.8 2.7 3.6 4.5 ID=-2A VDS=-10V 0.01 0.1 100 0.1 1 10 100 TC=25℃ DC 100ms 10ms 100µs 10µs 1ms -ID , Continuous Drain Current (A) Fig.7 Continuous Drain Current vs. TC Normalized On Resistance TJ , Junction Temperature (℃) Fig.8 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage TJ , Junction Temperature (℃) Fig.9 Normalized Vth vs. TJ -VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.10 Gate Charge Waveform Fig.11 Normalized Transient Impedance Square Wave Pulse Duration (s) -VDS , Drain to Source V oltage (V) Normalized Thermal Response -ID , Continuous Drain Current (A) TC , Case Temperature (℃)

Potens semiconductor corp. Ver.1.02 PDB2114S 20V N+P Dual Channel MOSFETs SYMBOL Dimensions (mm) SYMBOL Dimensions (mm) MIN MAX MIN MAX A 0.70 0.80 L 0.27 0.37 A1 0.00 0.05 J 0.40 b 0.20 0.30 N 6 D 1.95 2.05 aaa 0.08 D1 0.50 0.60 bbb 0.10 E 1.95 2.05 e 0.65BSC E1 0.85 0.95 --- DFN2X2-6L Dual 2EP PACKAGE INFORMATION