PDB0854S POTENS

Document overview

  • Manufacturer or author: Provided By www.digicamel.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics

Applications

 Networking  Load Switch  LED applications DFN2X2-6L Dual 2EP Pin Configuration G1 G2 ˙ D1 Pin1

Potens semiconductor corp. Ver.1.02 PDB0854S 100V Dual N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250µA 100 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.09 --- V/℃ IDSS Drain-Source Leakage Current VDS=100V , VGS=0V , TJ=25℃ --- --- 1 µA VDS=80V , VGS=0V , TJ=125℃ --- --- 10 µA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance2 VGS=10V , ID=1A --- 330 390 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250µA 1.2 1.8 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=1A --- 2.3 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=50V , VGS=10V , ID=1A --- 9 18 nC Qgs Gate-Source Charge2 , 3 --- 2.3 4.6 Qgd Gate-Drain Charge2 , 3 --- 1.1 2.5 Td(on) Turn-On Delay Time2 , 3 VDD=50V , VGS=10V , RG=3.3 ID=1A --- 5.2 10 ns Tr Rise Time2 , 3 --- 6.8 12 Td(off) Turn-Off Delay Time2 , 3 --- 14.5 28 Tf Fall Time2 , 3 --- 2.1 5 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 345 670 pF Coss Output Capacitance --- 9.3 19 Crss Reverse Transfer Capacitance --- 4.3 9 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 2.8 5.6  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 1.2 A ISM Pulsed Source Current2 --- --- 2.4 A VSD Diode Forward Voltage2 VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300µs , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.02 PDB0854S 100V Dual N-Channel MOSFETs Fig.1 Continuous Drain Current vs. TJ Fig.3 Normalized Vth vs. TJ TJ , Junction Temperature (℃) ID , Continuous Drain Current (A) Normalized On Resistance Fig.2 Normalized RDSON vs. TJ TJ , Junction Temperature (℃) Normalized Gate Threshold V oltage VGS , Gate to Source V oltage (V) Qg , Gate Charge (nC) Fig.4 Gate Charge Waveform Normalized Thermal Response Square Wave Pulse Duration (s) ID , Continuous Drain Current (A) VDS , Drain to Source V oltage (V) Fig.6 Maximum Safe Operation Area Fig.5 Normalized Transient Response TJ , Junction Temperature (℃)

Potens semiconductor corp. Ver.1.02 PDB0854S 100V Dual N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% VGS 10V / 4.5V Qg QgdQgs Gate Charge Fig.8 Gate Charge Waveform Fig.7 Switching Time Waveform

Potens semiconductor corp. Ver.1.02 PDB0854S 100V Dual N-Channel MOSFETs DFN2X2-6L Dual 2EP PACKAGE INFORMATION