PDC4904X POTENS

Document overview

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Technical content

Features

Applications

 Notebook  Load Switch  LED applications  Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Thermal Characteristics PPAK5X6 Pin Configuration D G S D G S S S D D D

Potens semiconductor corp. Ver.1.00 PDC4904X 40V N-Channel MOSFETs Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=250uA 40 --- --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=1mA --- 0.03 --- V/℃ IDSS Drain-Source Leakage Current VDS=40V , VGS=0V , TJ=25℃ --- --- 1 uA VDS=32V , VGS=0V , TJ=85℃ --- --- 10 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V , ID=20A --- 4.2 5.5 m VGS=4.5V , ID=10A --- 5.3 7 m VGS(th) Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 1.6 2.5 V △VGS(th) VGS(th) Temperature Coefficient --- -5 --- mV/℃ gfs Forward Transconductance VDS=10V , ID=10A --- 16 --- S Dynamic and switching Characteristics Qg Total Gate Charge2 , 3 VDS=32V , VGS=4.5V , ID=10A --- 25 50 nC Qgs Gate-Source Charge2 , 3 --- 6.4 13 Qgd Gate-Drain Charge2 , 3 --- 12.1 24 Td(on) Turn-On Delay Time2 , 3 VDD=20V, VGS=10V , RG=3.3 ID=1A --- 14.2 28 ns Tr Rise Time2 , 3 --- 18.3 36 Td(off) Turn-Off Delay Time2 , 3 --- 38.8 76 Tf Fall Time2 , 3 --- 13.9 28 Ciss Input Capacitance VDS=25V , VGS=0V , F=1MHz --- 2410 3600 pF Coss Output Capacitance --- 233 400 Crss Reverse Transfer Capacitance --- 152 230 Rg Gate resistance VGS=0V, VDS=0V, F=1MHz --- 1.6 3.2  Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current VG=VD=0V , Force Current --- --- 90 A ISM Pulsed Source Current --- --- 180 A VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1 V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%. 3. Essentially independent of operating temperature. Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Drain-Source Diode Characteristics and Maximum Ratings

Potens semiconductor corp. Ver.1.00 PDC4904X 40V N-Channel MOSFETs ID , Continuous Drain Current (A) Fig.1 Continuous Drain Current vs. TC Normalized On Resistance (m) Fig.2 Normalized RDSON vs. TJ Normalized Gate Threshold V oltage (V) Fig.3 Normalized Vth vs. TJ VGS , Gate to Source V oltage (V) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) Fig.5 Normalized Transient Impedance ID , Continuous Drain Current (A) Fig.6 Maximum Safe Operation Area TC , Case Temperature (℃) TJ , Junction Temperature (℃) Qg , Gate Charge (nC) TJ , Junction Temperature (℃) Square Wave Pulse Duration (s) VDS , Drain to Source V oltage (V)

Potens semiconductor corp. Ver.1.00 PDC4904X 40V N-Channel MOSFETs Td(on) Tr Ton Td(off) Tf Toff VDS VGS 90% 10% IAS VGS BVDSS VDD EAS= 1

2 L x IAS

Fig.7 Switching Time Waveform Fig.8 EAS Waveform

Potens semiconductor corp. Ver.1.00 PDC4904X 40V N-Channel MOSFETs Symbol Dimensions In Millimeters Dimensions In Inches MAX MIN MAX MIN A 1.100 0.800 0.043 0.031 b 0.510 0.330 0.020 0.013 C 0.300 0.200 0.012 0.008 D1 5.100 4.800 0.201 0.189 D2 4.100 3.610 0.161 0.142 E 6.200 5.900 0.244 0.232 E1 5.900 5.700 0.232 0.224 E2 3.780 3.350 0.149 0.132 e 1.27BSC 0.05BSC H 0.700 0.410 0.028 0.016 K 1.500 1.100 0.059 0.043 L 0.710 0.510 0.028 0.020 L1 0.200 0.060 0.008 0.002 θ 12° 0° 12° 0° PPAK5X6 PACKAGE INFORMATION