DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
30V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V (BR)DSS =-30V; R DS(ON) =0.35/H9024; I D =-1.1A
DESCRIPTION
This new generation of high density MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
Power management functions Disconnect switches Motor control
ORDERING INFORMATION
(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM61P03FTA 7 8 embossed 3,000 ZXM61P03FTC 13 8 embossed 10,000 DEVICE MARKING P03 SOT23 Pin out Top view 1 of 3sales@zpsemi.com www.zpsemi.com
PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate- Source Voltage V GS /H1100620 V Continuous Drain Current GS =-10V; T A =25°C)(b) GS =-10V; T A =70°C)(b) I D -1.1 -0.9 A Pulsed Drain Current (c) I DM -4.3 A Continuous Source Current (Body Diode)(b) I S -0.88 A Pulsed Source Current (Body Diode)(c) I SM -4.3 A Power Dissipation at T A =25°C (a) Linear Derating Factor P D 625 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor P D 806 6.4 mW mW/°C Operating and Storage Temperature Range T j stg -55 to +150 °C ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 3sales@zpsemi.com www.zpsemi.com
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V I D =-250 µA, V GS =0V Zero Gate Voltage Drain Current I DSS -1 µA V DS =-30V, V GS =0V Gate-Body Leakage I GSS /H11006100 nA V GS =/H1100620V, V DS =0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D =-250 µA, V DS GS Static Drain-Source On-State Resistance (1) R DS(on) 0.35 0.55 Ω Ω V GS =-10V, I D =-0.6A V GS =-4.5V, I D =-0.3A Forward Transconductance (3) g fs
0.44 S V
=-10V,I D =-0.3A DYNAMIC (3) Input Capacitance C iss 140 pF V DS =-25 V, V GS =0V, f=1MHzOutput Capacitance C oss 45 pF Reverse Transfer Capacitance C rss 20 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.9 ns V DD =-15V, I D =-0.6A R G =6.2 Ω,R D =25 Ω (Refer to test circuit) Rise Time t r 2.9 ns Turn-Off Delay Time t d(off) 8.9 ns Fall Time t f 5.0 ns Total Gate Charge Q g 4.8 nC V DS =-24V,V GS =-10V, I D =-0.6A (Refer to test circuit) Gate-Source Charge Q gs 0.62 nC Gate Drain Charge Q gd 1.3 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.95 V T j =25°C, I S =-0.6A, V GS =0V Reverse Recovery Time (3) t rr 14.8 ns T j =25°C, I F =-0.6A, di/dt= 100A/ µs Reverse Recovery Charge(3) Q rr 7.7 nC NOTES: (1) Measured under pulsed conditions. Width=300µs. Duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ZXM61P03F 30V P-CHANNEL ENHANCEMENT MODE MOSFET 3 of 3sales@zpsemi.com www.zpsemi.com