AP2302AGN ZPSEMI | Alldatasheet
Document overview
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- PDF pages: 6
Technical content
N-Channel Enhancement Mode MOSFET Feature 16V/3.6A, RDS(ON) = 100mΩ(MAX) @VGS = 4.5V . RDS(ON) = 140mΩ(MAX) @VGS = 2.5V . Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOT-23 for Surface Mount Package. SOT-23
Applications
- Power Management Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings TA=25 Unless Otherwise noted℃ Parameter Symbol Limit Units Drain-Source V oltage VDS 16 V Gate-Source V oltage VGS ±8 V Drain Current-Continuous ID 3.6 A Electrical Characteristics TA=25 Unless Otherwise noted℃ Parameter Symbol Test Conditions Min Typ. Max Units Off Characteristics Drain to Source Breakdown V oltage BVDSS VGS=0V , ID=250μA 16 - - V Zero-Gate V oltage Drain Current IDSS VDS=12V , VGS=0V - - 1 μA Gate Body Leakage Current, Forward IGSSF VGS=8V , VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-8V , VDS=0V - - -100 nA On Characteristics Gate Threshold V oltage VGS(th) VGS= VDS, ID=250µA 0.4 - 1.3 V Static Drain-source On-Resistance RDS(ON) VGS =4.5V , ID =3.6A - 70 100 mΩ VGS =2.5V , ID =3.1A - 75 140 mΩ Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward V oltage VSD VGS =0V , IS=0.94A 1.2 V sales@zpsemi.com www.zpsemi.com AP2302AGN 1 of 6
Package Outline Dimensions (UNIT: mm) SOT-23 sales@zpsemi.com www.zpsemi.com 4 of 6 AP2302AGN
sales@zpsemi.com www.zpsemi.com 5 of 6 AP2302AGN
sales@zpsemi.com www.zpsemi.com 6 of 6 AP2302AGN