BSS84 ZPSEMI | Alldatasheet
Document overview
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Technical content
P-Channel Enhancement Mode MOSFET Feature z -50V/-0.13A, R DS(ON) =10Ω(MAX) @V GS = -5V, Ids=-0.1A z Super High dense cell design for extremely low R DS(ON) z Reliable and Rugged z SOT-23 for Surface Mount Package S OT-23
Applications
Portable Equipment and Battery Powered Systems. Absolute Maximum Ratings T A =25℃ Unless Otherwise noted Parameter Symbol Limit Units Drain-Source Voltage V DS -50 V Gate-Source Voltage V GS ±20 V Drain Current-Continuous I D -0.13 A
Electrical Characteristics
T A =25℃ Unless Otherwise noted Parameter Symbol Test Conditions Min Typ. Max Units Off Characteristics Drain to Source Breakdown Voltage BVDSS VGS=0V, ID=-250µA -50 - - V Zero-Gate Voltage Drain Current IDSS VDS=-50V, VGS=0V - - -15 µA Gate Body Leakage Current, Forward IGSSF VGS=20V, VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA On Characteristics Gate Threshold Voltage VGS(th) VGS= VDS, ID=-1mA -0.8 - -2.5 V Static Drain-sourceOn-Resistance RDS(ON) VGS =-5V, ID =-0.1A - 5 10 Ω Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward Voltage VSD VGS =0V, IS=-0.13A -2.5 V sales@zpsemi.com www.zpsemi.com BSS84 1 of 5
Input Capacitance Ciss 30 pF Output Capacitance Coss 10 pF Reverse Transfer Capacitance Crss VGS=0V, VDS=-5V, f =1MHz 5 pF SWITCHING PARAMETERS Turn-On Delay Time t D(on) 2.5 ns Turn-On Rise Time t r 1.0 ns Turn-Off Delay Time t D(off) 16 ns Turn-Off Fall Time t f VGS=-10V, VDS=-15V, ID =-0.25A, RL=50Ω 8 ns Typical Characteristics sales@zpsemi.com www.zpsemi.com BSS84 2 of 5
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