CEM9926 ZPSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
Dual N-Channel Enhancement Mode MOSFET Feature 20V/6A, RDS(ON) = 33mΩ(MAX) @VGS = 4.5V . RDS(ON) = 50mΩ(MAX) @VGS = 2.5V . Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SOP-8 for Surface Mount Package. SOP-8
Applications
- LI-ION Protection Circuit Absolute Maximum Ratings TA=25 Unless Otherwise noted℃ Parameter Symbol Limit Units Drain-Source V oltage VDS 20 V Gate-Source V oltage VGS ±12 V Drain Current-Continuous ID 6 A Electrical Characteristics TA=25 Unless Otherwise noted℃ Parameter Symbol Test Conditions Min Typ. Max Units Off Characteristics Drain to Source Breakdown V oltage BVDSS VGS=0V , ID=250μA 20 - - V Zero-Gate V oltage Drain Current IDSS VDS=20V , VGS=0V - - 1 μA Gate Body Leakage Current, Forward IGSSF VGS=10V , VDS=0V - - 100 nA Gate Body Leakage Current, Reverse IGSSR VGS=-10V , VDS=0V - - -100 nA On Characteristics Gate Threshold V oltage VGS(th) VGS= VDS, ID=250µA 0.5 - 1.2 V Static Drain-source On-Resistance RDS(ON) VGS =4.5V , ID =6.0A - 24 33 mΩ VGS =2.5V , ID =5.2A - 32 50 mΩ Drain-Source Diode Characteristics and Maximum Ratings Drain-Source Diode Forward V oltage VSD VGS =0V , IS=1.5A 1.2 V SOP-8 sales@zpsemi.com www.zpsemi.com CEM9926 1 of 5
Package Outline Dimensions (UNIT: mm) SOP-8 sales@zpsemi.com www.zpsemi.com 4 of 5 CEM9926
sales@zpsemi.com www.zpsemi.com 5 of 5 CEM9926