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Technical content
Features
4.5V gate drive capability Thermally enhanced SOT23 package
Applications
Ordering information
(inches) Tape width (mm) Quantity per reel ZXMP3F30FHTA 7” 8mm 3,000 Pinout – top view Device marking KPA 1 of 3sales@zpsemi.com www.zpsemi.com
Parameter Symbol Limit Unit Drain-Source voltage V DSS -30 V Gate-Source voltage V GS ±20 V Continuous Drain current @ V GS = -10V; T A =25°C (b) @ V GS = -10V; T A =70°C (b) @ V GS = -10V; T A =25°C (a) @ V GS = -10V; T L =25°C (d) I D -3.4 -2.7 -2.8 -4.0 V Pulsed Drain current (c) I DM -15.3 A Continuous Source current (Body diode) (b) I S -2 A Pulsed Source current (Body diode) (c) I SM -15.3 A Power dissipation at T A =25°C (a) Linear derating factor P D 0.95 7.6 W mW/°C Power dissipation at T A =25°C (b) Linear derating factor P D 1.4 11.2 W mW/°C Power dissipation at T L =25°C (d) Linear derating factor P D 1.96 15.7 W mW/°C Operating and storage temperature range T j , T stg -55 to 150 °C Thermal resistance Parameter Symbol Value Unit Junction to ambient (a) R θJA 131 °C/W Junction to ambient (b) R θJA 89 °C/W Junction to lead (d) R θJL 63.77 °C/W NOTES: (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on FR4 PCB measured at t ≤ 10 sec. (c) Repetitive rating on 25mm x 25mm FR4 PCB, D=0.02, pulse width 300us – pulse width limited by maximum junction temperature. (d) Thermal resistance from junction to sol der-point (at the end of the drain lead). ZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 3sales@zpsemi.com www.zpsemi.com
Electrical characteristics (at T amb = 25°C unless otherwise stated) Parameter Symb ol Min. Typ. Max. Unit Conditions Static Drain-Source breakdown voltage V (BR)DSS -30 V I D = -250μA, V GS =0V Zero Gate voltage Drain current I DSS -1.0 µA V DS =-30V, V GS =0V Gate-Body leakage I GSS 100 nA V GS 20V, V DS =0V Gate-Source threshold voltage V GS(th) -1.0 V I D = -250μA, V DS GS Static Drain-Source on-state resistance R DS(on) 0.080 0.140 Ω V GS = -10V, I D = -2.5A V GS = -4.5V, I D = -1.9A Forward Transconductance ) (†) g fs S V DS = -15V, I D = -3A Dynamic (†) Input capacitance C iss 370 pF Output capacitance C oss 72 pF Reverse transfer capacitance C rss 38 pF V DS = -15V, V GS =0V f=1MHz Switching (‡) (†) Turn-on-delay time t d(on) 1.3 ns Rise time t r 2.6 ns Turn-off delay time t d(off) 49 ns Fall time t f 22 ns V DD = -15V, V GS = -10V I D = -1A R G ≅ 6.0Ω, Gate charge Total Gate charge Q g 7 nC Gate-Source charge Q gs 1.2 nC Gate-Drain charge Q gd 1.3 nC V DS = -15V, V GS = -10V I D = -3A Source–Drain diode Diode forward voltage V SD -0.80 -1.2 V I S = -1.7A,V GS =0V Reverse recovery time (‡) t rr 14.6 ns Reverse recovery charge (‡) Q rr 9.5 nC I S = -1.5A,di/dt=100A/μs NOTES: (*) Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%. (†)Switching characteristics are independent of operating junction temperature. (‡)For design aid only, not subject to production testing ZXMP3F30FH 30V SOT23 P-CHANNEL ENHANCEMENT MODE MOSFET 3 of 3sales@zpsemi.com www.zpsemi.com