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Technical content
V (BR)DSS = 20V : R DS on )=0.06 ; I D = 4.1A
DESCRIPTION
This new generation of trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
Power management functions Disconnect switches Motor control DEVICE MARKING 214 ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMN2A14FTA 7” 8mm 3000 units
ORDERING INFORMATION
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PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R /H9052JA 125 °C/W Junction to Ambient (b) R /H9052JA 82 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) For a device surface mounted on FR4 PCB measured at t /H113495 sec. (c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300/H9262s - pulse width limited by maximum junction temperature. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate-Source Voltage V GS /H1100612 V Continuous Drain Current @V GS =4.5V; T A =25°C (b) GS =4.5V; T A =70°C (b) GS =4.5V; T A =25°C (a) I D 4.1 3.3 3.4 A A A Pulsed Drain Current (c) I DM 19 A Continuous Source Current (Body Diode) (b) I S 1.7 A Pulsed Source Current (Body Diode) (c) I SM 19 A Power Dissipation at T A =25°C (a) Linear Derating Factor P D W mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor P D 1.5 W mW/°C Operating and Storage Temperature Range T j stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET 2 of 3sales@zpsemi.com www.zpsemi.com
PARAMETER SYMBOL MIN. TYP. MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS
20 V I
D =250 /H9262A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 /H9262AV DS =20V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =/H1100612V, V DS =0V Gate-Source Threshold Voltage V GS(th)
0.7 V I
D =250 /H9262A, V DS GS Static Drain-Source On-State Resistance (1) R DS(on) 0.060 0.110 /H9024 /H9024 V GS =4.5V, I D =3.4A V GS =2.5V, I D =2.5A Forward Transconductance (1) (3) g fs
9.4 S V
=10V,I D =3.4A DYNAMIC (3) Input Capacitance C iss 544 pF V DS =1 0 V ,V GS =0V, f=1MHz Output Capacitance C oss 132 pF Reverse Transfer Capacitance C rss 85 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 4.0 ns V DD = 10V, V GS =4 . 5 V I D =1 A R G 6.0 /H9024 Rise Time t r 5.3 ns Turn-Off Delay Time t d(off) 16.6 ns Fall Time t f 9.5 ns Total Gate Charge Q g 6.6 nC V DS =10V,V GS =4 . 5 V , I D =3.4A Gate-Source Charge Q gs 1.2 nC Gate-Drain Charge Q gd 2.1 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD 0.85 0.95 V T J =25°C, I S =(3.3)A, V GS =0V Reverse Recovery Time (3) t rr 11.4 ns T J =25°C, I F =(1.7)A, di/dt= 100A/ /H9262sReverse Recovery Charge (3) Q rr 4.6 nC ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated) NOTES (1) Measured under pulsed conditions. Pulse width /H11349300/H9262s; duty cycle /H113492%. (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET 3 of 3sales@zpsemi.com www.zpsemi.com