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Document overview
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Technical content
This new generation of trench MOSFETs from TY utilizes a unique structure that SUMMARY V (BR)DSS = -30V; R DS(ON) = 0.21 I D = -1.6A
DESCRIPTION
combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.
FEATURES
APPLICATIONS
Power management functions Disconnect switches Motor control DEVICE MARKING 313 ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET DEVICE REEL SIZE TAPE WIDTH QUANTITY PER REEL ZXMP3A13FTA 7” 8mm 3000 units ZXMP3A13FTC 13” 8mm 10000 units
ORDERING INFORMATION
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PARAMETER SYMBOL VALUE UNIT Junction to ambient (a) R θJA 200 °C/W Junction to ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t/H110885 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10/H9262s - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. THERMAL RESISTANCE PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS -30 V Gate Source Voltage V GS 20 V Continuous Drain Current V GS =10V; T A =25°C (b) V GS =10V; T A =70°C (b) V GS =10V; T A =25°C (a) I D -1.6 -1.3 -1.4 A Pulsed Drain Current (c) I DM -6 A Continuous Source Current (Body Diode) (b) I S -1.2 A Pulsed Source Current (Body Diode) (c) I SM -6 A Power Dissipation at T A =25°C (a) Linear Derating Factor P D 625 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor P D 806 6.4 mW mW/°C Operating and Storage Temperature Range T j stg -55 to +150 °C ABSOLUTE MAXIMUM RATINGS ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET 2 of 3sales@zpsemi.com www.zpsemi.com
PARAMETER SYMBOL MIN. TYP. MAX. UNIT C ONDITIONS STATIC Drain-Source Breakdown Voltage V (BR)DSS -30 V I D =-250 /H9262A, V GS =0V Zero Gate Voltage Drain Current I DSS -0.5 /H9262AV DS =-30V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =/H1100620V, V DS =0V Gate-Source Threshold Voltage V GS(th) -1.0 V I D =-250 /H9262A, V DS GS Static Drain-Source On-State Resistance (1) R DS(on) 0.210 0.330 /H9024 /H9024 V GS =-10V, I D =-1.4A V GS =-4.5V, I D =-1.1A Forward Transconductance (1)(3) g fs
2.4 S V
=-15V,I D =-1.4A DYNAMIC (3) Input Capacitance C iss 206 pF V DS =-15V, V GS =0V, f=1MHzOutput Capacitance C oss 59.3 pF Reverse Transfer Capacitance C rss 49.2 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.5 ns V DD =-15V, I D =-1A R G =6.0 /H9024,V GS =-10V Rise Time t r 3.0 ns Turn-Off Delay Time t d(off) 11.1 ns Fall Time t f 7.6 ns Gate Charge Q g 3.8 nC V DS =-15V,V GS =-5V, I D =-1.4A Total Gate Charge Q g 6.4 nC V DS =-15V,V GS =-10V, I D =-1.4AGate-Source Charge Q gs 0.69 nC Gate-Drain Charge Q gd 2.0 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD -0.85 -0.95 V T J =25°C, I S =-1.1A, V GS =0V Reverse Recovery Time (3) t rr 15.6 ns T J =25°C, I F =-0.95A, di/dt= 100A/ μsReverse Recovery Charge (3) Q rr 9.6 nC
ELECTRICAL CHARACTERISTICS
(at T A = 25°C unless otherwise stated) NOTES: (1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤ 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. ZXMP3A13F 30V P-CHANNEL ENHANCEMENT MODE MOSFET 3 of 3sales@zpsemi.com www.zpsemi.com