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XP152A12C0MR SOT-23 3, 000/Reel XP152A12C0MR-G (*) SOT-23 3,000/Reel PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss -20 V Gate - Source Voltage Vgss ±12 V Drain Current (DC) Id -0.7 A Drain Current (Pulse) Idp -2.8 A Reverse Drain Current Idr -0.7 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~150 ℃ ■GENERAL DESCRIPTION The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 packa g e makes hi g h densit y mountin g possible. ■APPLICATIONS
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems ■FEATURES Low On-State Resistance : Rds(on) = 0.3 Ω @ Vgs = -4.5V Rds(on) = 0.5 Ω @ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN CONFIGURATION/ MARKING ■PIN ASSIGNMENT ABSOLUTE MAXIMUM RATINGS ■EQUIVALENT CIRCUIT Ta = 25℃ * When implemented on a ceramic PCB G：Gate S：Source D：Drain x * x represents production lot number. (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. 1 of 2sales@zpsemi.com www.zpsemi.com
MIN. TYP . MAX. UNITS Drain Cut-Off Current Idss Vds= -20V, Vgs= 0V - - -10 μA Gate-Source Leak Current Igss Vgs= ±12V, Vds= 0V - - ±10 μA Gate-Source Cut-Off Voltage Vgs(off) Id = -1mA, Vds= -10V -0.5 - -1.2 V Drain-Source On-State Resistance *1 Rds(on) Forward Transfer Admittance *1 | Yfs | Id= -0.4A, Vds= -10V - 1.5 - S Body Drain Diode Forward Voltage Vf If= -0.7A, Vgs= 0V - -0.8 -1.1 V PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 250 - ℃/W PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Input Capacitance Ciss - 180 - pF Output Capacitance Coss - 120 - pF Feedback Capacitance Crss Vds= -10V, Vgs=0V f= 1MHz - 60 - pF PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Turn-On Delay Time td (on) - 5 - ns Rise Time tr - 20 - ns Turn-Off Delay Time td (off) - 55 - ns Fall Time tf Vgs= -5V, Id= -0.4A Vdd= -10V - 70 - ns ■ELECTRICAL CHARACTERISTICS DC Characteristics T a = 25℃ *1 Effective during pulse test. T a = 25℃ Switching Characteristics Thermal Characteristics Dynamic Characteristics T a = 25℃ XP152A12C0MR-G 2 of 2sales@zpsemi.com www.zpsemi.com