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Technical content

20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V (BR)DSS R DS(on) I D T A = 25°C -20V 600mΩ @ V GS = -4.5V -0.92A 900mΩ @ V GS = -2.7V -0.75A Description and Applications This MOSFET utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed, making it ideal for high-efficiency power management applications.

  • DC - DC converters
  • Power management functions
  • Disconnect switches
  • Motor control Features and Benefits
  • Fast switching speed
  • Low on-resistance
  • Low threshold
  • Low gate drive
  • “Lead Free”, RoHS Compliant (Note 1)
  • Halogen and Antimony Free. "Green" Device (Note 2)
  • Qualified to AEC-Q101 Standards for High Reliability Mechanical Data
  • Case: SOT23
  • Case Material: Molded Plastic, UL Flammability Classification Rating 94V-0
  • Moisture Sensitivity: Level 1 per J-STD-020
  • Terminals: Matte Tin Finish ; Solderable per MIL-STD-202, Method 208
  • Weight: 0.008 grams (approximate)

Ordering Information

(Note 3) Product Marking Reel size (inches) Tape width (mm) Quantity per reel ZXM61P02FTA P02 7 8 3000 Units Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free. 2. Diodes Inc’s “Green” Policy can be found on our website at http://www.twtysemi.com 3. For packaging details, go to our website at http://www.twtysemi.com Marking Information Top View Equivalent Circuit P02 = Product Type Marking Code D S G Top View Pin Out D S G SOT23 P02 1 of 3sales@zpsemi.com www.zpsemi.com

A = 25°C unless otherwise specified Characteristic Symbol Value Units Drain-Source Voltage V DSS -20 V Gate-Source Voltage V GS ±12 V Continuous Drain Current V GS = 4.5V T A = 25°C (Note 5) T A = 70°C (Note 5) I D -0.9 -0.7 A Pulsed Drain Current (Note 6) I DM -4.9 A Continuous Source Current (Body Diode) (Note 5) I S -0.9 A Pulsed Source Current (Body Diode) (Note 6) I SM -4.9 A Thermal Characteristics A = 25°C unless otherwise specified Characteristic Symbol Value Unit Power Dissipation (Note 4) Linear Derating Factor P D 625 mW mW/°C Power Dissipation (Note 5) Linear Derating Factor P D 806 6.4 mW mW/°C Thermal Resistance, Junction to Ambient (Note 4) R θJA 200 °C/W Thermal Resistance, Junction to Ambient (Note 5) R θJA 155 °C/W Operating and Storage Temperature Range T T STG -55 to +150 °C Notes: 4. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions 5. For a device surface mounted on FR4 PCB measured at t ≤5 secs. 6. Repetitive rating 25mm x 25 mm FR4 PCB, D=0.05 pulse width=10μs - pulse current limited by maximum junction temperature. ZXM61P02F 2 of 3sales@zpsemi.com www.zpsemi.com

Electrical Characteristics

A = 25°C unless otherwise specified Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS -20 ⎯ ⎯ V I D = -250μA, V GS = 0V Zero Gate Voltage Drain Current I DSS ⎯ ⎯ -0.1 μA V DS = -20V, V GS = 0V Gate-Source Leakage I GSS ⎯ ⎯ ±100 nA V GS = ±12V, V DS = 0V ON CHARACTERISTICS Gate Threshold Voltage V GS th -0.7 ⎯ ⎯ V I D = -250μA, V DS = V GS Static Drain-Source On-Resistance (Note 7) R DS (ON) ⎯ ⎯ 0.6 Ω V GS = -4.5V, I D = -0.61A 0.9 V GS = -2.7V, I D = -0.31A Forward Transconductance (Notes 7 and 9) g fs 0.56 ⎯ ⎯ S V DS = -10V, I D = -0.31A Diode Forward Voltage (Note 7) V SD ⎯ ⎯ -0.95 V T J = 25°C, I S = -0.61A, V GS = 0V Reverse Recovery Time (Note 9) t r r ⎯ 14.9 ⎯ ns T J = 25°C, I F = -0.61A, di/dt = 100A/μs Reverse Recovery Charge (Note 9) Q r r ⎯ 5.6 ⎯ nC DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C iss ⎯ 150 ⎯ pF V DS = -15V, V GS = 0V f = 1.0MHz Output Capacitance C oss ⎯ 70 ⎯ Reverse Transfer Capacitance C rss ⎯ 30 ⎯ Turn-On Delay Time (Note 8) t d on ⎯ 2.9 ⎯ ns V DD = -110V, I D = -0.93A, R G ≅ 6.2Ω, R D ≅ 11Ω, Turn-On Rise Time (Note 8) t r ⎯ 6.7 ⎯ Turn-Off Delay Time (Note 8) t d off ⎯ 11.2 ⎯ Turn-Off Fall Time (Note 8) t f ⎯ 10.1 ⎯ Total Gate Charge (Note 8) Q g ⎯ 3.5 ⎯ nC V DS = -16V, V GS = -4.5V, I D = -0.61A Gate-Source Charge (Note 8) Q g s ⎯ 0.5 ⎯ Gate-Drain Charge (Note 8) Q g d ⎯ 1.5 ⎯ Notes: 7. Measured under pulsed conditions. Pulse width = 300 μs. Duty cycle ≤ 2%. 8. Switching characteristics are independent of operating junction temperature. 9. For design aid only, not subject to production testing. ZXM61P02F 3 of 3sales@zpsemi.com www.zpsemi.com