DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 3

Technical content

30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N03F SUMMARY V (BR)DSS =30V; R DS(ON) =0.22V; I D =1.4A

DESCRIPTION

This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM61N03FTA 7 8mm embossed 3000 units ZXM61N03FTC 13 8mm embossed 10000 units DEVICE MARKING

  • N03 Top View SOT23 1 of 3sales@zpsemi.com www.zpsemi.com

ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 30 V Gate Source Voltage V GS ±20 V Continuous Drain Current (V GS =10V; T A =25°C)(b) ( V GS =10V; T A =70°C)(b) I D 1.4 1.1 A Pulsed Drain Current (c) I DM 7.3 A Continuous Source Current (Body Diode) (b) I S 0.8 A Pulsed Source Current (Body Diode) I SM 7.3 A Power Dissipation at T A =25°C (a) Linear Derating Factor P D 625 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor P D 806 6.4 mW mW/°C Operating and Storage Temperature Range T j stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N03F 2 of 3sales@zpsemi.com www.zpsemi.com

ELECTRICAL CHARACTERISTICS

(at T A = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS

30 V I

D =250 µ A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 µA V DS =30V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =± 20V, V DS =0V Gate-Source Threshold Voltage V GS(th)

1.0 V I

D =250 µA, V DS = V GS Static Drain-Source On-State Resistance (1) R DS(on) 0.22 0.30 Ω Ω V GS =10V, I D =0.91A V GS =4.5V, I D =0.46A Forward Transconductance (3) g fs

0.87 S V

=10V,I D =0.46A DYNAMIC (3) Input Capacitance C iss 150 pF V DS =25 V, V GS =0V, f=1MHzOutput Capacitance C oss 35 pF Reverse Transfer Capacitance C rss 15 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 1.9 ns V DD =15V, I D =0.91A R G =6.2 Ω , R D =16 Ω (refer to test circuit) Rise Time t r 2.5 ns Turn-Off Delay Time t d(off) 5.8 ns Fall Time t f 3.0 ns Total Gate Charge Q g 4.1 nC V DS =24V,V GS =10V, I D =0.91A (refer to test circuit) Gate-Source Charge Q gs 0.4 nC Gate-Drain Charge Q gd 0.63 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD

0.95 V T

J =25°C, I S =0.91A, V GS =0V Reverse Recovery Time (3) t rr 11.0 ns T J =25°C, I F =0.91A, di/dt= 100A/ µs Reverse Recovery Charge (3) Q rr 3.5 nC NOTES (1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 30V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N03F 3 of 3sales@zpsemi.com www.zpsemi.com