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20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F SUMMARY V (BR)DSS =20V; R DS(ON) =0.18V; I D =1.7A

DESCRIPTION

This new generation of high density MOSFETs from TY utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications.

FEATURES

  • Low on-resistance
  • Fast switching speed
  • Low threshold
  • Low gate drive
  • SOT23 package

APPLICATIONS

  • DC - DC Converters
  • Power Management Functions
  • Disconnect switches
  • Motor control

ORDERING INFORMATION

(inches) TAPE WIDTH (mm) QUANTITY PER REEL ZXM61N02FTA 7 8mm embossed 3000 units ZXM61N02FTC 13 8mm embossed 10000 units DEVICE MARKING

  • N02 Top View SOT23 sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-1234008-318-123 1 of 3sales@zpsemi.com www.zpsemi.com

ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DSS 20 V Gate Source Voltage V GS ± 12 V Continuous Drain Current (V GS =4.5V; T A =25°C)(b) ( V GS =4.5V; T A =70°C)(b) I D 1.7 1.3 A Pulsed Drain Current (c) I DM 7.4 A Continuous Source Current (Body Diode) (b) I S 0.8 A Pulsed Source Current (Body Diode) I SM 7.4 A Power Dissipation at T A =25°C (a) Linear Derating Factor P D 625 mW mW/°C Power Dissipation at T A =25°C (b) Linear Derating Factor P D 806 6.4 mW mW/°C Operating and Storage Temperature Range T j stg -55 to +150 °C THERMAL RESISTANCE PARAMETER SYMBOL VALUE UNIT Junction to Ambient (a) R θJA 200 °C/W Junction to Ambient (b) R θJA 155 °C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. ISSUE 1 - JUNE 2004 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F 2 of 3sales@zpsemi.com www.zpsemi.com

ELECTRICAL CHARACTERISTICS

(at T A = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. TYP.(3) MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS

20 V I

D =250 µ A, V GS =0V Zero Gate Voltage Drain Current I DSS 1 µA V DS =20V, V GS =0V Gate-Body Leakage I GSS 100 nA V GS =± 12V, V DS =0V Gate-Source Threshold Voltage V GS(th)

0.7 V I

D =250 µA, V DS = V GS Static Drain-Source On-State Resistance (1) R DS(on) 0.18 0.24 Ω Ω V GS =4.5V, I D =0.93A V GS =2.7V, I D =0.47A Forward Transconductance (3) g fs

1.3 S V

=10V,I D =0.47A DYNAMIC (3) Input Capacitance C iss 160 pF V DS =15 V, V GS =0V, f=1MHzOutput Capacitance C oss 50 pF Reverse Transfer Capacitance C rss 30 pF SWITCHING (2) (3) Turn-On Delay Time t d(on) 2.4 ns V DD =10V, I D =0.93A R G =6.2 Ω , R D =11 Ω (refer to test circuit) Rise Time t r 4.2 ns Turn-Off Delay Time t d(off) 7.8 ns Fall Time t f 4.2 ns Total Gate Charge Q g 3.4 nC V DS =16V,V GS =4.5V, I D =0.93A (refer to test circuit) Gate-Source Charge Q gs 0.41 nC Gate-Drain Charge Q gd 0.8 nC SOURCE-DRAIN DIODE Diode Forward Voltage (1) V SD

0.95 V T

J =25°C, I S =0.93A, V GS =0V Reverse Recovery Time (3) t rr 12.9 ns T J =25°C, I F =0.93A, di/dt= 100A/ µs Reverse Recovery Charge (3) Q rr 5.2 nC NOTES (1) Measured under pulsed conditions. Width≤300µs. Duty cycle ≤2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. 20V N-CHANNEL ENHANCEMENT MODE MOSFET ZXM61N02F 3 of 3sales@zpsemi.com www.zpsemi.com