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SOT-23 3,000/Reel XP151A11B0MR-G (*) SOT-23 3,000/Reel PARAMETER SYMBOL RATINGS UNITS Drain - Source Voltage Vdss 30 V Gate - Source Voltage Vgss ±20 V Drain Current (DC) Id 1 A Drain Current (Pulse) Idp 4 A Reverse Drain Current Idr 1 A Channel Power Dissipation * Pd 0.5 W Channel Temperature Tch 150 ℃ Storage Temperature Tstg -55~150 ℃ ■APPLICATIONS
- Notebook PCs
- Cellular and portable phones
- On-board power supplies
- Li-ion battery systems ■GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. ■FEATURES Low On-State Resistance : Rds(on) = 0.12 Ω @ Vgs = 10V Rds(on) = 0.17 Ω @ Vgs = 4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free ■PIN CONFIGURATION/ MARKING ■PRODUCT NAMES ■EQUIVALENT CIRCUIT ABSOLUTE MAXIMUM RATINGS Ta = 25℃ * When implemented on a ceramic PCB G：Gate S：Source D：Drain (*) The “-G” suffix denotes Halogen and Antimony free as well as being fully RoHS compliant. x * x represents production lot number. 1 of 2sales@zpsemi.com www.zpsemi.com
MIN. TYP . MAX. UNITS Drain Cut-Off Current Idss Vds= 30V, Vgs= 0V - - 10 μA Gate-Source Leak Current Igss Vgs= ±20V, Vds= 0V - - ±10 μA Gate-Source Cut-Off Voltage Vgs(off) Id= 1mA, Vds= 10V 1.0 - 3.0 V Id= 0.5A, Vgs= 10V - 0.09 0.12 Ω Drain-Source On-State Resistance *1 Rds(on) Id= 0.5A, Vgs= 4.5V - 0.13 0.17 Ω Forward Transfer Admittance *1 | Yfs | Id= 0.5A, Vds= 10V - 2.4 - S Body Drain Diode Forward Voltage Vf If= 1A, Vgs= 0V - 0.8 1.1 V PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Thermal Resistance (Channel-Ambience) Rth (ch-a) Implement on a ceramic PCB - 250 - ℃/W PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Input Capacitance Ciss - 150 - pF Output Capacitance Coss - 90 - pF Feedback Capacitance Crss Vds= 10V, Vgs=0V f=1MHz - 30 - pF PARAMETER SYMBOL CONDITIONS MIN. TYP . MAX. UNITS Turn-On Delay Time td (on) - 10 - ns Rise Time tr - 15 - ns Turn-Off Delay Time td (off) - 25 - ns Fall Time tf Vgs= 5V, Id= 0.5A Vdd= 10V - 45 - ns ■ELECTRICAL CHARACTERISTICS DC Characteristics T a = 25℃ *1 Effective during pulse test. T a = 25℃ Switching Characteristics Thermal Characteristics Dynamic Characteristics T a = 25℃ XP151A11B0MR-G 2 of 2sales@zpsemi.com www.zpsemi.com