VP3203

VP3203 SUTEX | Alldatasheet

Document overview

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices P-Channel Enhancement-Mode Vertical DMOS FETs Package Options Note: See Package Outline section for dimensions.

Applications

❏ Motor controls ❏ Converters ❏ Amplifiers ❏ Switches ❏ Power supply circuits ❏ Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. TO-92 S G D TO-243AA (SOT-89) G D S D Product marking for TO-243AA: VP2L❋ Where ❋ = 2-week alpha date code

Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W * ID (continuous) is limited by max rated T j. † Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P D increase possible on ceramic substrate. VP3203 Thermal Characteristics Switching Waveforms and Test Circuit 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -30 V V GS = 0V, ID = -10mA VGS(th) Gate Threshold Voltage -1.0 -3.5 V V GS = VDS, ID = -10mA ∆VGS(th) Change in VGS(th) with Temperature -5.5 mV/ °CV GS = VDS, ID = -10mA IGSS Gate Body Leakage -1.0 -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating -1 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -14 A V GS = -10V, VDS = -5V RDS(ON) TO-92 1.0 Ω VGS = -4.5V, ID = -1.5A SOT-89 1.0 Ω VGS = -4.5V, ID = -0.75A TO-92 0.6 Ω VGS = -10V, ID = -3A SOT-89 0.6 Ω VGS = -10V, ID = -1.5A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/ °CV GS = -10V, ID = -1.5A GFS Forward Transconductance 1.0 2.0 V DS = -25V, ID = -2A CISS Input Capacitance 200 300 COSS Common Source Output Capacitance 100 120 pF CRSS Reverse Transfer Capacitance 45 60 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop -1.6 V V GS = 0V, ISD = -1.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -1A Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) ns VGS = 0V, VDS = -25V f = 1 MHz Ω VDD = -25V ID = -2A RGEN = 10Ω Static Drain-to-Source ON-State Resistance

Typical Performance Curves Output Characteristics -20 -16 -12 Saturation Characteristics -20 -16 -12 Maximum Rated Safe Operating Area -0.1 -100 -10-1.0 -0.1 -1.0 -10 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 Transconductance vs. Drain Current Power Dissipation vs. Temperature 0 15010050 2.0 1.6 1.2 0.8 0.4 1257525 TO-243AA TO-92 TA = -55°C TO-243AA(DC) TO-92 (DC) TO-243AA (pulsed) TO-92 (pulsed) TA = 25°C TA = 125°C 0- 1- 2 - 3 - 5 -4 -6V -4V -3V -8V -6V -4V -3V -8V TO-243AA TA = 25 °C PD = 1.6W T= 25A C° VDS (volts) ID (amperes) ID (amperes) VDS (volts) VGS = -10V VGS = -10V GFS (siemens) ID (amperes) T A (°C) PD (watts) VDS = -25V VDS (volts) ID (amperes) tp (seconds) TO-92 PD = 1W TC = 25 °C

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TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VP3203 Typical Performance Curves Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 300 225 150 C (picofarads) -0 -10 -20 -30 0- 2 - 4- 6- 8 - 1 0 -10 -50 0 50 100 150 1.1 1.0 2.0 1.6 1.2 0.8 0.4 1.4 1.2 1.0 0.8 0.6 1.4 1.2 1.0 0.8 0.6 -10 -50 0 50 100 150 1 2 3 45 VGS = -10V 125°C f = 1MHz 0.9 335pF V(th) @ -10mA RDS(ON) @ -10V, -3A 25°C 200 pF RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) BVDSS Variation with Temperature VGS = -5V Tj (°C) VGS(th) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) RDS(ON) (normalized) VDS = -25V TA = -55°C QG (nanocoulombs) VGS (volts) VDS (volts) VDS = -20V VDS = -10VCISS COSS CRSS