TC6320 SUTEX | Alldatasheet
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Features
Integrated gate-source resistor Integrated gate-source zener diode Low threshold Low on-resistance Independent N- and P-channels Electrically isolated N- and P-channels Low input capacitance Fast switching speeds Free from secondary breakdowns Low input and output leakage Application High voltage pulsers Amplifiers Buffers Piezoelectric transducer drivers General purpose line drivers Logic level interfaces Absolute Maximum Ratings* Drain-to-Source Voltage BVDSS Drain-to-Gate Voltage BVDGS Operating and Storage Temperature -55°C to +150°C Soldering Temperature* 300°C *Distance of 1.6mm from case for 10 seconds. General Description The Supertex TC6320TG consists of a high voltage low threshold N-channel and P-channel MOSFET in an SO-8 package. Both MOSFETs have integrated gate-source resistors and gate-source zener diode clamps which are desired for high voltage pulser applications. TC6320TG, a complementary high-speed, high voltage, gate-clamped N- and P-channel MOSFET pair in a single SO-8 package. The TC6320TG offers 200V breakdown voltage, 2.0A output peak current and low input capacitance. The 2.0A output current capability will minimize rise and fall times. The low input capacitance will minimize propagation delay times and also rise and fall times. The MOSFETs have integrated gate-source resistors and gate-source zener diode clamps that are desired for high voltage pulser applications saving board space and improving performance. It is specifically designed for applications in medical ultrasound transmitters and non- destructive evaluation in materials flaw detection, but it can also be used as an efficient buffer. Package Option (top view) N-Channel P-Channel
Supertex, Inc. January 21, 2003 BVDSS / BVDGS RDS(ON) (max) Order Number / Package N-Channel P-Channel N-Channel P-Channel SO-8 200V -200V 7.0Ω 8.0Ω TC6320TG N-Channel Electrical Characteristics (at TA=25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V VGS=0V, ID=2mA VGS(th) Gate Threshold Voltage 1.0 2.0 V VGS=VDS, ID=1mA ∆VGS(th) Change in VGS(th) with Temperature -4.5 mV/°C VGS=VDS, ID=1mA RGS Gate-Source Shunt Resistor KΩ IGS=100µA ∆RGS Change in RGS with Temperature TBD %/°C IGS=100µA VzGS Gate-Source Zener Voltage 13.2 V IGS=2mA ∆VzGS Change in VzGS with Temperature TBD mV/°C IGS=2mA µA VGS=0V, VDS=Max Rating IDSS Zero Gate Voltage Drain Current 1.0 mA VGS=0V, VDS=0.8 Max Rating, TA=125°C 1.0 VGS=4.5V, VDS=25V ID(ON) On-State Drain Current 2.0 A VGS=10V, VDS=25V 8.0 VGS=4.5V, ID=150mA RDS(ON) Static Drain-to-Source ON-State Resistance 7.0 Ω VGS=10V, ID=1.0A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS=4.5V, ID=150mA GFS Forward Transconductance 400 mmho VDS=25V, ID=200mA CISS Input Capacitance 110 COSS Common Source Output Capacitance CRSS Reverse Transfer Capacitance pF VGS=0V, VDS=25V f=1MHz td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time ns VDD=25V, ID=1.0A RGEN=25 Ω VSD Diode Forward Voltage Drop 1.8 V VGS=0V, ISD=0.5A trr Reverse Recovery Time 300 ns VGS=0V, ISD=0.5A Notes: 1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested. N-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T OUTPUT 10V VDD td(OFF) Input Output tr tf td(ON) t(ON) t(OFF) 10% 90% 90% 10% 90% 10%
P-Channel Electrical Characteristics (at TA=25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-Source Breakdown Voltage -200 V VGS=0V, ID=-2mA VGS(th) Gate Threshold Voltage -1.0 -2.4 V VGS=VDS, ID=-1mA ∆VGS(th) Change in VGS(th) with Temperature 4.5 mV/°C VGS=VDS, ID=-1mA RGS Gate-Source Shunt Resistor KΩ IGS=-100µA ∆RGS Change in RGS with Temperature TBD %/°C IGS=-100µA VzGS Gate-Source Zener Voltage 13.2 V IGS=-2mA ∆VGS(th) Change in VzGS with Temperature TBD mV/°C IGS=-2mA -10 µA VGS=0V, VDS=Max Rating IDSS Zero Gate Voltage Drain Current -1.0 mA VGS=0V, VDS=0.8 Max Rating, TA=125°C -1.0 VGS=-4.5V, VDS=-25V ID(ON) On-State Drain Current -2.0 A VGS=-10V, VDS=-25V VGS=-4.5V, ID=-150mA RDS(ON) Static Drain-to-Source ON-State Resistance 8.0 Ω VGS=-10V, ID=-1.0A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/°C VGS=-10V, ID=-200mA GFS Forward Transconductance 400 mmho VDS=-25V, ID=-200mA CISS Input Capacitance 200 COSS Common Source Output Capacitance CRSS Reverse Transfer Capacitance pF VGS=0V, VDS=-25V f=1MHz td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-Off Delay Time tf Fall Time ns VDD=-25V, ID=-1.0A RGEN=25 Ω VSD Diode Forward Voltage Drop -1.8 V VGS=0V, ISD=-0.5A trr Reverse Recovery Time 300 ns VGS=0V, ISD=-0.5A Notes: 1) All DC parameters 100% tested at 25°C unless otherwise stated. (Pulsed test: 300µs pulse at 2% duty cycle.) 2) All AC parameters sample tested. P-Channel Switching Waveforms and Test Circuit RGEN Input Pulse Generator VDD RL D.U.T OUTPUT -10V VDD td(OFF) Input Output tr tf td(ON) t(ON) t(OFF) 90% 10% 90% 10% 10% 90% 1/22/03