TP5335 SUTEX | Alldatasheet
Document overview
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Technical content
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices
Applications
Logic level interfaces – ideal for TTL and CMOS Solid state relays Analog switches Power Management Telecom switches TO-236AB (SOT-23) top view Gate Source Drain P-Channel Enhancement-Mode Vertical DMOS FETs Low Threshold Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds. Product Objective Specification BVDSS /R DS(ON) VGS(th) BVDGS (max) (max) TO-236AB* Wafer -350V 30 Ω -2.4V TP5335K1 TP5335NW *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.
Ordering Information
Order Number/Package Product marking for SOT-23 Where *=2-week alpha date code P3S❋
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -350 V V GS = 0V, ID = -100µA VGS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID = -1.0mA ∆VGS(th) Change in VGS(th) with Temperature 4.5 mV/ °CV GS = VDS, ID = -1.0mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating -1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C -5.0 nA V GS = 0V, VDS = -330V ID(ON) ON-State Drain Current -200 mA VGS = -4.5V, VDS = -25V -400 V GS = -10V, VDS = -25V RDS(ON) 75 Ω VGS = -4.5V, ID = -150mA 30 Ω VGS = -10V, ID = -200mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/ °CV GS = -10V, ID = -200mA GFS Forward Transconductance 125 m V DS = -25V, ID = -200mA CISS Input Capacitance 110 COSS Common Source Output Capacitance 60 pF CRSS Reverse Transfer Capacitance 22 td(ON) Turn-ON Delay Time 20 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop -1.8 V V GS = 0V, ISD = -200mA trr Reverse Recovery Time 800 ns V GS = 0V, ISD = -200mA Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns I D = -150mA RGEN = 25Ω Ω Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W SOT-23 -85mA -400mA 0.36W 200 350 -85mA -400mA * ID (continuous) is limited by max rated Tj. Thermal Characteristics TP5335