VP0645 SUTEX | Alldatasheet

Document overview

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Technical content

Features

■■ Free from secondary breakdown ■■ Low power drive requirement ■■ Ease of paralleling ■■ Low CISS and fast switching speeds ■■ Excellent thermal stability ■■ Integral Source-Drain diode ■■ High input impedance and high gain ■■ Complementary N- and P-channel devices S G D D G S Case: DRAIN TAB: DRAIN G D S – OBSOLETE –

90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V VP0645/VP0650 Switching Waveforms and Test Circuit Thermal Characteristics Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TC = 25°C °C/W °C/W TO-92 -0.1A -0.3A 1W 125 170 -0.1A -0.3A TO-39 -0.25A -0.5A 6W 21 125 -0.25A -0.5A ID (continuous) is limited by max rated T j. Electrical Characteristics (@ 25°C unless otherwise specified) Symbol Parameter Min Typ Max Unit Conditions BVDSS VP0650 -500 VP0645 -450 VGS(th) Gate Threshold Voltage -2 -4 V V GS = VDS, ID = -2mA ∆VGS(th) Change in VGS(th) with Temperature -4.8 mV/ °CV GS = VDS, ID = -2mA IGSS Gate Body Leakage -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -200 V GS = -5V, VDS = -25V -200 -700 V GS = -10V, VDS = -25V RDS(ON) 27 V GS = -5V, ID = -100mA 22 30 V GS = -10V, ID = -100mA ∆RDS(ON) Change in RDS(ON) with Temperature 0.75 %/ °CV GS = -10V, ID = -100mA GFS Forward Transconductance 50 125 m V DS = -25V, ID = -100mA CISS Input Capacitance 95 160 COSS Common Source Output Capacitance 50 75 pF CRSS Reverse Transfer Capacitance 10 20 td(ON) Turn-ON Delay Time 10 tr Rise Time 10 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 15 VSD Diode Forward Voltage Drop -1.8 V V GS = 0V, ISD = -50mA trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -50mA Notes: 2. All A.C. parameters sample tested. mA Drain-to-Source Breakdown Voltage Static Drain-to-Source ON-State Resistance -1 mA VV GS = 0V, ID = -2mA VGS = 0V, VDS =- 25V f = 1 MHz VDD = -25V ns I D = -200mA RGEN = 25Ω Ω Ω – OBSOLETE –

Typical Performance Curves VP0645/VP0650 Output Characteristics 0 -10 -20 -30 -50 -40 Saturation Characteristics -0.5 -0.4 -0.3 -0.2 -0.1 0- 2- 4 - 6 -10-8 Maximum Rated Safe Operating Area -0.01 -0.1 -1.0 -0.001 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 Transconductance vs. Drain Current 0.5 0.4 0.3 0.2 0.1 Power Dissipation vs. Case Temperature 0 15010050 1257525 TO-220 TO-39 TO-39 PD = 6W TC = 25 °C TO-220 PD = 45W TC = 25 °C TO-92 (DC) TO-39 (DC) TO-39 (pulsed) TO-220 (DC) -1 -1000 -100-10 TA= -55°C TA = 25°C TA = 125°C VDS = -25V VGS = -10V -1.0 -0.8 -0.6 -0.4 -0.2 VGS = -10V -4V -6V -8V -6V -4V TO-92 TC = 25 °C VDS (volts) ID (amperes) ID (amperes) VDS (volts) GFS (siemens) ID (amperes) T C (°C) PD (watts) VDS = -25V VDS (volts) ID (amperes) tp (seconds) TO-92 PD = 1W TC = 25 °C – OBSOLETE –

Typical Performance Curves Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 200 150 100 C (picofarads) 0 -10 -20 -30 -40 0- 2 - 4- 6- 8 - 1 0 -50 0 50 100 150 1.1 1.0 0.9 -50 0 50 100 150 -1.0 -0.8 -0.6 -0.4 -0.2 VDS = -25V f = 1MHz -10 250 pF 90 pF V(th) @ -2mA 1.2 1.1 1.0 0.9 0.8 2.0 1.0 RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) BVDSS Variation with Temperature VGS = -5V VGS = -10V Tj (°C) VGS(th) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) RDS(ON) (normalized) TA = -55°C TA = 25°C TA = 150°C RDS(ON) @ -10V, -0.1A QG (nanocoulombs) VGS (volts) VDS (volts) CISS COSS CRSS VDS = -40V VDS = -10V – OBSOLETE –