TC2320 SUTEX | Alldatasheet

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Features

❑ Low threshold ❑ Low on resistance ❑ Independent, electrically isolated N- and P-channels ❑ Low input capacitance ❑ Fast switching speeds ❑ Free from secondary breakdowns ❑ Low input and output leakage Application ❑ Medical Ultrasound Transmitters ❑ High voltage pulsers ❑ Amplifiers ❑ Buffers ❑ Piezoelectric transducer drivers ❑ General purpose line drivers ❑ Logic level interfaces Low Threshold DMOS Technology The Supertex TC2320TG consist of a high voltage low threshold N- channel and P-channel MOSFET in an SO-8 package. These low threshold enhancement-mode (normally-off) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Absolute Maximum Ratings* Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ±20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C *Distance of 1.6mm from case for 10 seconds. VB SSD VB/ SGD R )NO(SD )xam(e gakcaP/rebmuNredrO lennahC-Nl ennahC-Pl ennahC-Nl ennahC-P8 -OS V002V 002-0 .72 1G T0232CT Package Option (top view) N-Channel P-Channel

Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage 200 V I D = 100µA, VGS = 0V VGS(th) Gate Threshold Voltage 0.6 2.0 V V GS = VDS, ID = 1mA ∆VGS(th) Change in VGS(th) with Temperature -4.5 mV/ °CI D = 1mA, VGS = VDS IGSS Gate Body Leakage 100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current 1.0 µAV GS = 0V, VDS = 100V 10.0 µAV GS = 0V, VDS = Max Rating 1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current 0.6 A VGS = 4.5V, VDS = 25V

1.2 V GS = 10V, VDS = 25V

RDS(ON) Static Drain-to-Source 8.0 Ω VGS = 4.5V, ID = 150mA ON-State Resistance 7.0 Ω VGS = 10V, ID = 1.0A ∆RDS(ON) Change in RDS(ON) with Temperature 1.0 %/ °CV GS = 4.5V, ID = 150mA GFS Forward Transconductance 150 m V DS = 25V, ID = 200mA CISS Input Capacitance 110 COSS Common Source Output Capacitance 60 pF V GS = 0V, VDS = 25V, f = 1MHz CRSS Reverse Transfer Capacitance 23 td(ON) Turn-ON Delay Time 20 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 25 tf Fall Time 25 VSD Diode Forward Voltage Drop 1.8 V I SD = 200mA, VGS = 0V trr Reverse Recovery Time 300 ns I SD = 200mA, VGS = 0V Notes: 2.All A.C. parameters sample tested. N-Channel Electrical Characteristics (@ 25°C unless otherwise specified) VDD = 25V ns I D = 150mA RGEN = 25Ω Ω 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT 10V VDD Rgen Switching Waveforms and Test Circuit

Switching Waveforms and Test Circuit Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -200 V V GS = 0V, ID = -2mA VGS(th) Gate Threshold Voltage -1.0 -2.4 V V GS = VDS, ID= -1mA ∆VGS(th) Change in VGS(th) with Temperature 4.5 mV/ °CV GS = VDS, ID= -1mA IGSS Gate Body Leakage -100 nA V GS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating -1.0 mA V GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.25 -0.7 V GS = -4.5V, VDS = -25V RDS(ON) 10 15 Ω VGS = -4.5V, ID = -100mA 8.0 12 V GS = -10V, ID = -200mA ∆RDS(ON) Change in RDS(ON) with Temperature 1.7 %/ °CV GS = -10V, ID = -200mA GFS Forward Transconductance 100 250 m V DS = -25V, ID = -200mA CISS Input Capacitance 75 125 COSS Common Source Output Capacitance 20 85 pF CRSS Reverse Transfer Capacitance 10 35 td(ON) Turn-ON Delay Time 10 tr Rise Time 15 td(OFF) Turn-OFF Delay Time 20 tf Fall Time 15 VSD Diode Forward Voltage Drop -1.8 V V GS = 0V, ISD = -0.5A trr Reverse Recovery Time 300 ns V GS = 0V, ISD = -0.5A Notes: 2.All A.C. parameters sample tested. P-Channel Electrical Characteristics (@ 25°C unless otherwise specified) A Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = -25V f = 1 MHz ns Ω

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TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 03/23/02 ©2002 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V