TP5335_07 SUTEX | Alldatasheet

Document overview

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Technical content

Features

High input impedance and high gain Low power drive requirement Ease of paralleling Low C ISS and fast switching speeds Excellent thermal stability Integral source-drain diode Free from secondary breakdown Complementary N- and P-channel devices

Applications

Logic level interfaces - ideal for TTL and CMOS Solid state relays Analog switches Power management Telecom switches General Description The Supertex TP5335 is a low threshold enhancement- mode (normally-off) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coeffi cient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Absolute Maximum Ratings Parameter Value Drain-to-source voltage BV DSS Drain-to-gate voltage BV DGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Soldering temperature* 300 OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. *Distance of 1.6mm from case for 10 seconds.

Ordering Information

RDS(ON) (max) VGS(TH) (max) Package Options TO-236AB -350V 30Ω -2.4V TP5335K1 TP5335K1-G -G indicates package is RoHS compliant (‘Green’) P-Channel Enhancement-Mode Vertical DMOS FET Pin Confi guration TO-236AB (Top View) Gate Source Drain Product Marking Information Product marking for SOT-23: where = 2-week alpha date code Underline indicates Pb-Free (”Green”) P3S

Electrical Characteristics (@25OC unless otherwise specifi ed) Symbol Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage -350 - - V V GS = 0V, ID = -100µA VGS(TH) Gate threshold voltage -1.0 - -2.4 V V DS = VGS, ID = -1.0mA ΔVGS(TH) Change in VGS(TH) with temperature - - 4.5 mV/ OCV DS = VGS, ID = -1.0mA IGSS Gate body leakage current - - -100 nA V GS = ±20V, VDS = 0V IDSS Zero gate voltage drain current - - -10 µA V DS = Max rating, VGS = 0V - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC - - -5.0 nA V GS = 0V, VDS = -330V ID(ON) ON-State drain current -200 - - mA VGS = -4.5V, VDS = -25V -400 - - V GS = -10V, VDS = -25V RDS(ON) Static drain-to-source ON-state resistance -- 7 5 Ω VGS = -4.5V, ID = -150mA - - 30 V GS = -10V, ID = -200mA ΔRDS(ON) Change in RDS(ON) with temperature - - 1.7 %/ OCV GS = -10V, ID = -200mA GFS Forward transconductance 125 - - mmho V DS = -25V, ID = -200mA CISS Input capacitance - - 110 pF VGS = 0V, VDS = -25V, f = 1MHz COSS Common source output capacitance - - 60 CRSS Reverse transfer capacitance - - 22 td(ON) Turn-ON delay time - - 20 ns VDD = -25V, ID = -150mA, RGEN = 25Ω, tr Rise time - - 15 td(OFF) Turn-OFF delay time - - 25 tf Fall time - - 25 VSD Diode forward voltage drop - - -1.8 V V GS = 0V, ISD = -200mA trr Reverse recovery time - 800 - ns V GS = 0V, ISD = -200mA Notes: 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD RGEN -10V Thermal Characteristics Package ID (continuous)1 ID (pulsed) Power Dissipation @TA = 25OC Θjc (OC/W) Θja (OC/W) IDR

1 IDRM

TO-236AB -85mA -400mA 0.36W 200 350 -85mA -400mA Notes: 1. ID (continuous) is limited by max rated Tj.

(The package drawing(s) in this data sheet may not refl ect the most current specifi cations. For the latest package outline information go to http://www.supertex.com/packaging.html.) 3-Lead TO-236AB (SOT-23) Package Outline (K1) 0.0173 ± 0.0027 (0.4394 ± 0.0685) 0.0906 ± 0.0079 (2.299 ± 0.199) 0.0754 ± 0.0053 (1.915 ± 0.135) 0.0512 ± 0.004 (1.3004 ± 0.1016) 0.0207 ± 0.003 (0.5257 ± 0.0762) 0.115 ± 0.005 (2.920 ± 0.121) 0.0400 ± 0.007 (1.016 ± 0.178) 0.0210 ± 0.003 (0.5334 ± 0.076) 0.0382 ± 0.003 (0.9690 ± 0.0762) 0.0035 ± 0.0025 (0.0889 ± 0.0635) 0.0043 ± 0.0009 (0.1092 ± 0.0229) NOM0.0197 (0.50) Dimensions in Inches (Dimensions in Millimeters)Measurement Legend = Top View Side View End View Doc.# DSFP-TP5335 A032707