VP2206 SUTEX | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices TO-39 D G S Case: DRAIN TO-92 S G D
90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tF tr INPUT INPUT OUTPUT VDD Rgen -10V Package ID (continuous)* ID (pulsed) Power Dissipation θjc θja IDR* IDRM @ TC = 25°C °C/W °C/W TO-39 -0.75A -8.0A 6.0W 20.8 125 -0.75A -8.0A TO-92 -0.64A -4.0A 1.0W 125 170 -0.64A -4.0A * ID (continuous) is limited by max rated Tj. VP2206 Switching Waveforms and Test Circuit Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions BVDSS Drain-to-Source Breakdown Voltage -60 V VGS = 0V, ID = -10mA VGS(th) Gate Threshold Voltage -1.0 -3.5 V VGS = VDS, ID = -10mA ∆VGS(th) Change in VGS(th) with Temperature -4.3 -5.5 mV/°C VGS = VDS, ID = -10mA IGSS Gate Body Leakage -100 nA VGS = ± 20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -50 µA VGS = 0V, VDS = Max Rating -10 mA VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.85 VGS = -5V, VDS = -25V A VGS = -10V, VDS =- 25V RDS(ON) 1.3 1.5 VGS = -5V, ID = -1A 0.75 0.9 Ω VGS = -10V, ID = -3.5A ∆RDS(ON) Change in RDS(ON) with Temperature 0.85 1.2 %/°C VGS = -10V, ID = -3.5A GFS Forward Transconductance 0.8 1.4 VDS = -25V, ID = -2A CISS Input Capacitance 325 450 COSS Common Source Output Capacitance 125 180 pF CRSS Reverse Transfer Capacitance td(ON) Turn-ON Delay Time tr Rise Time td(OFF) Turn-OFF Delay Time tf Fall Time VSD Diode Forward Voltage Drop -1.1 -1.6 V VGS = 0V, ISD = -3.5A trr Reverse Recovery Time 500 ns VGS = 0V, ISD = -1A Note 1: All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) Note 2: All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) Static Drain-to-Source ON-State Resistance Ω VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns ID = -4A RGEN = 10Ω
Typical Performance Curves VP2206 Output Characteristics -10 Saturation Characteristics -10 Maximum Rated Safe Operating Area -1000 -100 -10 -0.1 -1.0 -10 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 Transconductance vs. Drain Current -10 Power Dissipation vs. Case Temperature 150 100 125 D TO-39 PD = 6.0W TC = 25°C TO-92 TO-39 TO-39 (DC) TO-92 (DC) TO-39 (pulsed) -10 -20 -30 -50 -40 -3V -10 -6V TO-92 (pulsed) TO-92 PD = 1.0W TC = 25°C -8V -4V -3V -8V TA = 125°C -6V -4V TC = 25°C VDS (volts) ID (amperes) ID (amperes) VDS (volts) VGS = -10V VGS = -10V GFS (siemens) ID (amperes) TC (°C) PD (watts) TA = 25°C TA= -55°C VDS = -25V VDS (volts) ID (amperes) tp (seconds)
1235 Bordeaux Drive, Sunnyvale, CA 94089
TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. Gate Drive Dynamic Characteristics VGS(th) (normalized) On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 400 C (picofarads) -10 -20 -30 -40 300 200 -10 -10 -50 100 150 1.1 1.0 1.2 1.1 1.0 0.9 0.8 0.7 -10 -50 100 150 310 pF VGS = -10V 125°C -10 f = 1MHz 0.9 725 pF 2.0 1.6 1.2 0.8 0.4 V(th)@ -1mA RDS(ON) @ -10V, -3.5A 25°C 100 VGS = -5V RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) BVDSS Variation with Temperature VDS = -25V Tj (°C) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) RDS(ON) (normalized) TA = -55°C QG (nanocoulombs) VGS (volts) VDS (volts) CISS COSS CRSS VDS = -40V VDS = -10V VP2206 Typical Performance Curves