VP2206N3-G SUTEX | Alldatasheet

Document overview

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Technical content

Features

► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► High input impedance and high gain ► Excellent thermal stability ► Integral source-to-drain diode

Applications

► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex VP2206 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. GATE SOURCE DRAIN TO-39 (N2) GATE SOURCE DRAIN TO-92 (N3) YY = Year Sealed WW = Week Sealed = “Green” Packaging SiVP 2 206 YYWW Package may or may not include the following marks: Si or Package may or may not include the following marks: Si or Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55OC to +150OC Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground.

Ordering Information

Package Options Wafer / Die Options TO-39 TO-92 NW (Die in wafer form) NJ (Die on adhesive tape) ND (Die in waffle pack) VP2206 VP2206N2 VP2206N3-G VP5206NW VP5206NJ VP5206ND For packaged products, -G indicates package is RoHS compliant (‘Green’). TO-39 package is RoHS compliant (‘Green’). Devices in Wafer / Die form are RoHS compliant (‘Green’). Refer to Die Specification VF52 for layout and dimensions. Product Summary Device BVDSS/BVDGS (V) RDS(ON) (max) (Ω) ID(ON) (min) (A) VP2206N2 -60 0.9 -4.0VP2206N3-G

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Electrical Characteristics (TA = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -10mA VGS(th) Gate threshold voltage -1.0 - -3.5 V VGS = VDS, ID= -10mA ΔVGS(th) Change in VGS(th) with temperature - -4.3 -5.5 mV/OC VGS = VDS, ID= -10mA IGSS Gate body leakage - -1.0 -100 nA VGS = ± 20V, VDS = 0V IDSS Zero gate voltage drain current - - -50 µA VGS = 0V, VDS = Max Rating - - -10 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C ID(ON) On-state drain current -4.0 -9.0 - A VGS = -10V, VDS = -25V RDS(ON) Static drain-to-source on-state resistance - 1.3 1.5 Ω VGS = -5.0V, ID = -1.0A ΔRDS(ON) Change in RDS(ON) with temperature - 0.85 1.2 %/OC VGS = -10V, ID = -3.5A GFS Forward transductance 800 1400 - mmho VDS = -25V, ID = -2.0A CISS Input capacitance - 325 450 pF VGS = 0V, VDS = -25V, f = 1.0MHz COSS Common source output capacitance - 125 180 CRSS Reverse transfer capacitance - 30 40 td(ON) Turn-on delay time - 4.0 15 ns VDD = -25V, ID = -4.0A, RGEN = 10Ω tr Rise time - 16 25 td(OFF) Turn-off delay time - 16 50 tf Fall time - 22 50 VSD Diode forward voltage drop - -1.1 -1.6 V VGS = 0V, ISD = -3.5A trr Reverse recovery time - 500 - ns VGS = 0V, ISD = -1.0A Notes: 2. All A.C. parameters sample tested. Notes: † ID (continuous) is limited by max rated TJ . Thermal Characteristics Package ID (continuous)† (A) ID (pulsed) (A) Power Dissipation @TC = 25OC (W) θJC (OC/W) θJA (OC/W) IDR (A) IDRM (A) Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% Pulse Generator VDD RL Output D.U.T. t(ON) td(ON) t(OFF) td(OFF) tf tr INPUT INPUT OUTPUT VDD RGEN -10V

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves Output CharacteristicsS aturation Characteristics Maximum Rated Safe Operating Area -10 -1.0 -0.1 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 0.001 0.01 0.1 1.0 10 Transconductance vs. Drain Current 2.0 1.0 0 -5.0 -10 Power Dissipation vs. Case Temperature 0 25 50 75 100 125 150 TO-39 PD = 6.0W TC = 25OC TO-92 TO-39 TO-39 (DC) TO-92 (DC) TO-39 (pulsed) 0 -10 -20 -30 -40 -50 -3V -6V TO-92 (pulsed) -4V -3V -8V -6V -4V TC = 25OC VDS (volts) ID (amperes) VDS (volts) VGS = -10V VGS = -10V GFS (siemens) ID (amperes) TC (OC) PD (watts) VDS = -25V VDS (volts) ID (amperes) tP (seconds) ID (amperes) TA = 125OC -8V TA = 25OC TA = -55OC TO-92 PD = 1.0W TC = 25OC -10 -8.0 -6.0 -4.0 -2.0 -10 -8.0 -6.0 -4.0 -2.0 8.0 6.0 4.0 2.0 8.0 6.0 4.0 2.0

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves (cont.) Gate Drive Dynamic Characteristics VGS(th) (normalized) On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 400 300 200 100 C (picofarads) 0 -10 -20 -30 -40 -50 0 50 100 150 1.1 1.0 0.9 5.0 4.0 3.0 2.0 1.0 1.2 1.1 1.0 0.9 0.8 0.7 -10 -8.0 -6.0 -4.0 -2.0 00 2.0 4.0 6.0 8.0 10 310 pF f = 1.0MHz 725 pF 2.0 1.6 1.2 0.8 0.4 V(th) @ -1.0mA RDS(ON) @ -10V, -3.5A VGS = -5.0V RDS(ON) (ohms) BVDSS (normalized) Tj (OC) ID (amperes) BVDSS Variation with Temperature VDS = -25V V(th) and RDS Variation with Temperature VGS (volts) RDS(ON) (normalized) QG (nanocoulombs) VGS (volts) VDS (volts) CISS COSS CRSS VDS = -40VVDS = -10V Tj (OC) ID (amperes) VGS = -10V -50 0 50 100 150 25OC TA = -55OC 125OC -10 -8.0 -6.0 -4.0 -2.0

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com 3-Lead TO-39 Package Outline (N2) Side ViewBottom View ΦD1 ΦD A h L Φb j k Φa 1 2 3 β α Seating Plane β Symbol α β A Φa Φb ΦD ΦD1 h j k L Dimension (inches) MIN 45O NOM 90O NOM JEDEC Registration TO-39. * This dimension is not specified in the JEDEC drawing. Drawings not to scale. Supertex Doc. #: DSPD-3TO39N2, Version B052009.

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) ©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com VP2206 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VP2206 D031411 3-Lead TO-92 Package Outline (N3) Symbol A b c D E E1 e e1 L Dimensions (inches) JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Seating Plane Front View Side View Bottom View E D L e c 1 2 3 b A