VP2110K1-G SUTEX | Alldatasheet

Document overview

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Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-to-drain diode High input impedance and high gain

Applications

Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex VP2110 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Package may or may not include the following marks: Si or

  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Electrical Characteristics (TA = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-Source breakdown voltage -100 - - V VGS = 0V, ID = -1.0mA VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID= -1.0mA ΔVGS(th) Change in VGS(th) with temperature - 5.8 6.5 mV/OC VGS = VDS, ID= -1.0mA IGSS Gate body leakage - -1.0 -100 nA VGS = ± 20V, VDS = 0V IDSS Zero Gate voltage Drain current - - -10 µA VGS = 0V, VDS = Max Rating - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C ID(ON) On-state Drain current -0.5 -1.0 - A VGS = -10V, VDS = -25V RDS(ON) Static Drain-to-Source on-state resistance - 11 15 Ω VGS = -5.0V, ID = -100mA - 9.0 12 VGS = -10V, ID = -500mA ΔRDS(ON) Change in RDS(ON) with temperature - 0.55 1.0 %/OC VGS = -10V, ID = -500mA GFS Forward transductance 150 200 - mmho VDS = -25V, ID = -500mA CISS Input capacitance - 45 60 pF VGS = 0V, VDS = -25V, f = 1.0MHz COSS Common Source output capacitance - 22 30 CRSS Reverse transfer capacitance - 3.0 8.0 td(ON) Turn-on delay time - 4.0 5.0 ns VDD = -25V, ID = -500mA, RGEN = 25Ω tr Rise time - 5.0 8.0 td(OFF) Turn-off delay time - 5.0 9.0 tf Fall time - 4.0 8.0 VSD Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -500mA trr Reverse recovery time - 400 - ns VGS = 0V, ISD = -500mA Notes: 2. All A.C. parameters sample tested. Notes: † ID (continuous) is limited by max rated Tj . Thermal Characteristics Package ID (continuous)† (mA) ID (pulsed) (mA) Power Dissipation @TA = 25OC (W) θjc (OC/W) θja (OC/W) IDR (mA) IDRM (mA) TO-236AB (SOT-23) -120 -400 0.36 200 350 -120 -400 Switching Waveforms and Test Circuit 90% 10% 90% 90% 10%10% PULSE GENERATOR VDD RL Output D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD RGEN -10V
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves Output Characteristics -2.0 -1.6 -1.2 -0.8 -0.4 Saturation Characteristics -1.0 -0.8 -0.6 -0.4 -0.2 Maximum Rated Safe Operating Area -0.1 -100-10-1.0 -0.01 -0.1 -1.0 -0.001 Thermal Response Characteristics )dezilamron( ecnatsiseR lamrehT 1.0 0.8 0.6 0.4 0.2 0.001 100.01 0.1 1.0 Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 0 15010050 1.0 0.5 1257525 TO-236A B VDS = 25V TO-236AB (DC) TO-236AB (pulsed) 0 - 10 -20 - 30 -50-40 0 -2 -4 - 6 -10-8 250 200 150 100 -7V -6V -5V -4V -3V -8V -9V -7V -6V -5V -4V -8V -9V TA = 25°C TO-236A B PD = 0.36W TA = 25 °C VGS = -10V VDS (volts) ID )serepma( ID )serepma( VDS (volts) VGS = -10V G SF )snemeisillim( ID (amperes) TA (°C) PD )sttaw( TA = 125°C TA = 25°C TA= -55°C VDS (volts) ID )serepma( tp (seconds)
  • 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves (cont.) Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 100 )sdarafocip( C 0 - 10 -20 - 30 -40 0 -2 -4 -6 - 8 -10 -1.0 -0.8 -0.6 -0.4 -0.2 -50 0 50 100 150 -1.1 -1.0 1.4 1.2 1.0 0.8 0.6 -10 -50 0 50 100 1 50 35 pF VGS = -10V 125°C f = 1MHz CISS COSS CRSS -0.9 101 pF 2.0 1.6 1.2 0.8 0.4 V(th)@ 1mA RDS(ON) @ -10V, 0.5A 25°C 1.0 2.0 R )NO(SD )smho( VB SSD )dezilamron( Tj (°C) ID (amperes) BVDSS Variation with Temperature VGS = -5V Tj (°C) V )ht(SG )dezilamron( V(th) and RDS Variation with Temperature VGS (volts) ID )serepma( R )NO(SD )dezilamron( VDS = -25V TA = -55°C QG (nanocoulombs) V SG )stlov( VDS (volts) VDS = -40V VDS = -10V

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications ©2009 All rights reserved. Unauthorized use or reproduction is prohibited .

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com VP2110 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VP2110 A041309 3-Lead TO-236AB (SOT-23) Package Outline (K1/T) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch Symbol A A1 A2 b D E E1 e e1 L L1 θ Dimension (mm) 0.95 BSC 1.90 BSC 0.20† 0.54 REF JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309. View B View A - ASide View Top View View B