VP2106 SUTEX | Alldatasheet

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Technical content

Features

❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. BV DSS /R DS(ON) ID(ON) BVDGS (max) (min) TO-92 TO-236AB* Die † -60V 12 Ω -0.5A VP2106N3 — — -100V 12 Ω -0.5A — VP2110K1 VP2110ND Product marking for SOT-23: P1A❋ where ❋ = 2-week alpha date code Order Number / Package † MIL visual screening available. *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

Ordering Information

(SOT-23) top view S D GAbsolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

90% 10% 90%90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD Rgen -10V VP2106/VP2110 Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR*I DRM @ TA = 25°C °C/W °C/W TO-236AB -120mA -400mA 0.36W 200 350 -120mA -400mA ID (continuous) is limited by max rated Tj. Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions VP2110 -100 VP2106 -60 VGS(th) Gate Threshold Voltage -1.5 -3.5 V V GS = VDS, ID = -1.0mA ∆VGS(th) Change in VGS(th) with Temperature 5.8 6.5 mV/ °CI D = -1.0mA, VGS = VDS IGSS Gate Body Leakage -1.0 -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 µAV GS = 0V, VDS = Max Rating VGS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.50 -1.0 A V GS = -10V, VDS = -25V RDS(ON) 11 15 V GS = -5V, ID = -0.1A 9.0 12 V GS = -10V, ID = -0.5A ∆RDS(ON) Change in RDS(ON) with Temperature 0.55 1.0 %/ °CV GS = -10V, ID = -0.5A GFS Forward Transconductance 150 200 m V DS = -25V, ID = -0.5A CISS Input Capacitance 45 60 COSS Common Source Output Capacitance 22 30 pF CRSS Reverse Transfer Capacitance 3 8 td(ON) Turn-ON Delay Time 4 5 tr Rise Time 5 8 td(OFF) Turn-OFF Delay Time 5 9 tf Fall Time 4 8 VSD Diode Forward Voltage Drop -1.2 -2.0 V I SD = -0.5A, VGS = 0V trr Reverse Recovery Time 400 ns I SD = -0.5A, VGS = 0V Notes: 2.All A.C. parameters sample tested. BVDSS Drain-to-Source Breakdown Voltage Electrical Characteristics (@ 25°C unless otherwise specified) VI D = -1.0mA, VGS = 0V -1 mA Static Drain-to-Source ON-State Resistance VGS = 0V, VDS = -25V f = 1 MHz VDD = -25V ns I D = -0.5A RGEN = 25Ω Ω Ω

Typical Performance Curves VP2106/VP2110 Output Characteristics -2.0 -1.6 -1.2 -0.8 -0.4 Saturation Characteristics -1.0 -0.8 -0.6 -0.4 -0.2 Maximum Rated Safe Operating Area -0.1 -100 -10-1.0 -0.01 -0.1 -1.0 -0.001 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1.0 Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 0 15010050 1.0 0.5 1257525 TO-236AB VDS = 25V TO-236AB (DC) TO-236AB (pulsed) TO-92 (DC) TO-92 (pulsed) 250 200 150 100 -7V -6V -5V -4V -3V -8V -9V -7V -6V -5V -4V -8V -9V TA = 25°C TO-236AB PD = 0.36W TA = 25 °C TO-92 PD = 1.0W TA = 25 °C TO-92 VGS = -10V VDS (volts) ID (amperes) ID (amperes) VDS (volts) VGS = -10V GFS (millisiemens) ID (amperes) T A (°C) PD (watts)TA = 125°C TA = 25°C TA= -55°C VDS (volts) ID (amperes) tp (seconds)

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TEL: (408) 744-0100 • FAX: (408) 222-4895 www.supertex.com 11/12/01 ©2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. VP2106/VP2110 Typical Performance Curves Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) 0 -10 -20 -30 -40 0- 2 - 4- 6- 8 - 1 0 -1.0 -0.8 -0.6 -0.4 -0.2 -50 0 50 100 150 -1.1 -1.0 1.4 1.2 1.0 0.8 0.6 -10 -50 0 50 100 150 35 pF VGS = -10V 125°C f = 1MHz CISS COSS CRSS -0.9 101 pF 2.0 1.6 1.2 0.8 0.4 V(th)@ 1mA RDS(ON) @ -10V, 0.5A 25°C 1.0 2.0 RDS(ON) (ohms) BVDSS (normalized) Tj (°C) ID (amperes) BVDSS Variation with Temperature VGS = -5V Tj (°C) VGS(th) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) RDS(ON) (normalized) VDS = -25V TA = -55°C QG (nanocoulombs) VGS (volts) VDS (volts) VDS = -40V VDS = -10V