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Technical content

Features

► Free from secondary breakdown ► Low power drive requirement ► Ease of paralleling ► Low CISS and fast switching speeds ► High input impedance and high gain ► Excellent thermal stability ► Integral source-to-drain diode

Applications

► Motor controls ► Converters ► Amplifiers ► Switches ► Power supply circuits ► Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) General Description The Supertex VP2106 is an enhancement-mode (normally- off) transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. GATE SOURCE DRAIN Pin Configuration Package may or may not include the following marks: Si or

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Electrical Characteristics (TA = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units Conditions BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -1.0mA VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID= -1.0mA ΔVGS(th) Change in VGS(th) with temperature - 5.8 6.5 mV/OC VGS = VDS, ID= -1.0mA IGSS Gate body leakage - -1.0 -100 nA VGS = ± 20V, VDS = 0V IDSS Zero gate voltage drain current - - -10 µA VGS = 0V, VDS = Max Rating - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C ID(ON) On-state drain current -0.5 -1.0 - A VGS = -10V, VDS = -25V RDS(ON) Static drain-to-source on-state resistance - 11 15 Ω VGS = -5.0V, ID = -100mA - 9.0 12 VGS = -10V, ID = -500mA ΔRDS(ON) Change in RDS(ON) with temperature - 0.55 1.0 %/OC VGS = -10V, ID = -500mA GFS Forward transductance 150 200 - mmho VDS = -25V, ID = -500mA CISS Input capacitance - 45 60 pF VGS = 0V, VDS = -25V, f = 1.0MHz COSS Common source output capacitance - 22 30 CRSS Reverse transfer capacitance - 3.0 8.0 td(ON) Turn-on delay time - 4.0 5.0 ns VDD = -25V, ID = -500mA, RGEN = 25Ω tr Rise time - 5.0 8.0 td(OFF) Turn-off delay time - 5.0 9.0 tf Fall time - 4.0 8.0 VSD Diode forward voltage drop - -1.2 -2.0 V VGS = 0V, ISD = -500mA trr Reverse recovery time - 400 - ns VGS = 0V, ISD = -500mA Notes: 2. All A.C. parameters sample tested. Notes: † ID (continuous) is limited by max rated Tj . Thermal Characteristics Package ID (continuous)† (mA) ID (pulsed) (mA) Power Dissipation @TA = 25OC (W) θjc (OC/W) θja (OC/W) IDR (mA) IDRM (mA) TO-92 -250 -800 0.74 125 170 -250 -800 Switching Waveforms and Test Circuit 90% 10% 90% 90% 10% 10% Pulse Generator VDD RL Output D.U.T. t(ON) td(ON) t(OFF) td(OFF) tf tr INPUT INPUT OUTPUT VDD RGEN -10V

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves Output Characteristics -2.0 -1.6 -1.2 -0.8 -0.4 Saturation Characteristics -1.0 -0.8 -0.6 -0.4 -0.2 Maximum Rated Safe Operating Area -0.1 -1.0 -10 -100 -1.0 -0.1 -0.01 -0.001 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 0.01 0.1 1.0 10 Transconductance vs. Drain Current Power Dissipation vs. Ambient Temperature 0 25 50 75 100 125 150 1.0 0.5 250 200 150 100 -7V -6V -5V -4V -3V -9V -7V -6V -5V -4V -8V -9V TO-92 PD = 1.0W TA = 25OC TO-92 VDS (volts) ID (amperes) ID (amperes) VDS (volts) VGS = -10V GFS (millisiemens) ID (amperes) TA (OC) PD (watts) VDS (volts) ID (amperes) tP (seconds) -8V VGS = -10V VDS = 25V TA = -55OC 25OC 125OC TO-92 (DC) TO-92 (pulsed) TA = 25OC

Supertex inc. ● 1235 Bordeaux Drive, Sunnyvale, CA 94089 ● Tel: 408-222-8888 ● www.supertex.com Typical Performance Curves (cont.) Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage 100 C (picofarads) 0 -10 -20 -30 -40 -1.0 -0.8 -0.6 -0.4 -0.2 -50 0 50 100 150 -1.1 -1.0 -0.9 8.0 6.0 4.0 2.0 1.4 1.2 1.0 0.8 0.6 -10 -8.0 -6.0 -4.0 -2.0 0 1.0 2.0 -50 0 50 100 150 35 pF f = 1.0MHz CISS COSS CRSS 101 pF 2.0 1.6 1.2 0.8 0.4 V(th) @ 1.0mA RDS(ON) @ -10V. 0.5A RDS(ON) (ohms) BVDSS (normalized) Tj (OC) ID (amperes) BVDSS Variation with Temperature VGS = -5.0V VGS(th) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) RDS(ON) (normalized) VDS = -25V TA = -55OC QG (nanocoulombs) VGS (volts) VDS (volts) VDS = -10V VGS = -10V Tj (OC) 25OC 125OC VDS = -40V

Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such appl ications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) ©2011 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Supertex inc.

1235 Bordeaux Drive, Sunnyvale, CA 94089

Tel: 408-222-8888 www.supertex.com VP2106 (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Doc.# DSFP-VP2106 B042911 3-Lead TO-92 Package Outline (N3) Symbol A b c D E E1 e e1 L Dimensions (inches) JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. Seating Plane Front View Side View Bottom View E D L e c 1 2 3 b A