VP1310 SUTEX | Alldatasheet

Document overview

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Technical content

Features

Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral Source-Drain diode High input impedance and high gain Complementary N- and P-channel devices

Applications

Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Absolute Maximum Ratings Drain-to-Source Voltage BV DSS Drain-to-Gate Voltage BV DGS Gate-to-Source Voltage ± 20V Operating and Storage Temperature -55 °C to +150°C Soldering Temperature* 300 °C * Distance of 1.6 mm from case for 10 seconds.

Ordering Information

90% 10% 90%90% 10% 10% PULSE GENERATOR VDD R L OUTPUT D.U.T. t(ON) td(ON) t(OFF) td(OFF) tFtr INPUT INPUT OUTPUT VDD R gen -10V VP1304/VP1306/VP1310 Switching Waveforms and Test Circuit Package I D (continuous)* I D (pulsed) Power Dissipation θjc θja IDR *I DRM @ T C = 25°C °C/W °C/W * ID (continuous) is limited by max rated Tj. TA = 25°C Thermal Characteristics Symbol Parameter Min Typ Max Unit Conditions VP1310 -100 VP1306 -60 VP1304 -40 V GS(th) Gate Threshold Voltage -1.5 -3.5 V V GS = VDS , ID = -1mA ΔV GS(th) Change in VGS(th) with Temperature -3.2 -3.85 mV/ °CV GS = VDS , ID = -1mA IGSS Gate Body Leakage -0.1 -100 nA V GS = ±20V, VDS = 0V IDSS Zero Gate Voltage Drain Current -10 V GS = 0V, VDS = Max Rating µAV GS = 0V, VDS = 0.8 Max Rating TA = 125°C ID(ON) ON-State Drain Current -0.08 -0.23 V GS = -5V, VDS = -25V R DS(ON) 32 40 V GS = -5V, ID = -50mA 19 25 V GS = -10V, ID = -250mA ΔR DS(ON) Change in RDS(ON) with Temperature 0.8 1.1 %/ °CV GS = -10V, ID = -250mA G FS Forward Transconductance 75 120 m V DS = -25V, ID = -200mA C ISS Input Capacitance 20 35 C OSS Common Source Output Capacitance 12 15 pF C RSS Reverse Transfer Capacitance 3 5 td(ON) Turn-ON Delay Time 3 5 tr Rise Time 3 5 td(OFF) Turn-OFF Delay Time 3 5 tf Fall Time 3 8 VSD Diode Forward Voltage Drop -1.2 -1.7 V I SD = -0.25A, VGS = 0V trr Reverse Recovery Time 350 ns I SD = -0.25A, VGS = 0V Notes: 2. All A.C. parameters sample tested. Electrical Characteristics (@ 25°C unless otherwise specified) BV DSS Drain-to-Source Breakdown Voltage A VI D = -1mA, VGS = 0V -500 Static Drain-to-Source ON-State Resistance VDD = -25V ns I D = -250mA R GEN = 25Ω VGS = 0V, VDS = -25V f = 1 MHz Ω Ω

Typical Performance Curves VP1304/VP1306/VP1310 -8V Output Characteristics Saturation Characteristics Maximum Rated Safe Operating Area -0.1 -1.0 -10 -0.01 Thermal Response Characteristics Thermal Resistance (normalized) 1.0 0.5 0.001 10 0.01 0.1 1.0 Transconductance vs. Drain Current 0.1 -1.0 -0.8 -0.6 -0.4 -0.2 -6V -3V -4V -8V -6V -4V -3V -0.5 -0.4 -0.3 -0.2 -0.1 0.2 -0.1 -100 -10-1.0 Power Dissipation vs. Ambient Temperature 2.5 2.0 1.5 1.0 0.5 TO-92 TO-92 (pulsed) TO-92 (DC) VDS (volts) ID (amperes) ID (amperes) VDS (volts) VGS = -10V VGS = -10V G FS (siemens) ID (amperes) T C (°C) PD (watts) VDS (volts) ID (amperes) tp (seconds) TA = 125°C TA = 25°C TA = 25°C TA= -55°C VDS = -25V TO-92 P D = 1W TC = 25°C

Typical Performance Curves Gate Drive Dynamic Characteristics On-Resistance vs. Drain Current Transfer Characteristics Capacitance vs. Drain-to-Source Voltage C (picofarads) 0 -10 -20 -30 -40 0 - 2- 4- 6- 8 - 1 0 -1.0 -0.8 -0.6 -0.4 -0.2 -50 0 50 100 150 1.1 1.0 0.9 100 1.2 1.1 1.0 0.9 0.8 2.0 1.6 1.2 0.8 0.4 -10 -50 0 50 100 150 25 pF 25°C 125°C f = 1MHz 40 pF V(th) @ -1mA R DS(ON) @ -10V, -0.25A R DS(ON) (ohms) BV DSS (normalized) Tj (°C) ID (amperes) BV DSS Variation with Temperature VGS = -5V VGS = -10V Tj (°C) VGS(th) (normalized) V(th) and RDS Variation with Temperature VGS (volts) ID (amperes) R DS(ON) (normalized) VDS = -25V TA = -55°C C ISS C OSS C RSS Q G (nanocoulombs) VGS (volts) VDS (volts) VDS = -40V VDS = -10V