VP12C SUTEX | Alldatasheet
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Technical content
"SUPERTEX INC OL pe azzaens goog1u743 & | @ Supertex inc. 739-79 ® P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BV p55 / oon Order Number / Package BVoas (nin) [toa [tows [to-220 [pice | Features Advanced DMOS Technology (© Freedom from secondary breakdown ‘These enhancement-mode (normally-off) power transistors util- ize a vertical DMOS structure and Supertex's well-proven silicon- G_ Low power drive requirement gate manufacturing process. This combination produces devices CO Ease of paralleling with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient D Low C,., and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, it these devices are free from thermal runaway and thermally- D_ Excellent thermal stability induced secondary breakdown. Integral Source-Drain diode ‘Supertex Vertical DMOS Power FETs are ideally suited to a wide High input impedance and high gain range of switching and amplifying applications where high break- A 2] . down voltage, high input impedance, low input capacitance, and © Complementary N- and P-Channel devices fast switching speeds are desired. Applications Package Options (Notes 1 and 2) Motor contro Convertors © Amplifiers O Switches Power supply circuits Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) Toss Lop Absolute Maximum Ratings i Ss Drain-to-Source Voltage BV oss, ro20 Tos Drain-to-Gate Voltage BVocs. Gate-to-Source Voltage +20V Operating and Storage Temperature -55°C to +150°C Note 1: See Package Ouline section for eiscrote pinouts. Soldering Temperature* 300°C Note 2: See Array section for quad pinouts. *Distance of 1.6 mm from case for 10 seconds. 9-61
SUPERTEX INC o1 ve arzaess goo1744 o | VP12C Thermal Characteristics T-39-79 1, (continuous)* Power Dissipation lon ona a @T,=25°C [ros [asada tcow | tas aaa | A [Toso 20a aa sw tas 20208 45a | [to22o [ssa son aw 70275 -a5a [6.00] * Ip (continuous) i ited by max rated), Electrical Characteristics (@ 25°C unless otherwise specified (Notes 1 and 2) pe [evmecr | —Parameter————* win | Typ | Mex] Unt | Conditions BY, Drain-to-Source i | Vosmy | Gate Threshotd Vottage | 45 | [85 TV VegeVog p= t0mA [Ves | Change in Voguy with Temperature [| 38 | 45 | mVPC | Vag =Vogslo=-10mA | [| logs | Gate Body Leakage Tf 100 | nA Vag 2200, Vyg=0 | : Zoro Gate Voltage Drain Current [| -¥0 [00 [WA] Vos = 0, Vag =Max Rating | : Veg = 0, Vog = 0.8 Max Rating : T= 126°C : ‘ON-State Drain Current [os [ a0; | 4 [ 40 [79 [| Static Drain-to-Source | 20 | 409 | : ON-State Resistance” | 16 | 25 | : [_ Rosie | Change in Rogow with Temperature || 08 | 10 | PC | pe -tAVog=-f0V | : |_ Gp | Forward Transconductance | 8 | 42 || OT Vg= 25s Ibn 380A | | Cys | Input Capacitance | 600 | 80 | Vi. 20, V,. =-25V | Coss | Common Source Output Capacitance || 200 | 260] pF | yoy, | Crus | Reverso Transter Capacitance [20 | 80 | : | ‘worm | Tum-OFFDelayTime | a5 [80 | Rig=500 : fy | Fattime eo | i Note 1: AID.C, parameters 100% tested al 25°C unless otherwise stated. (Pulse test: 300us pulse, 2% duty cycle.) H Noioz: ALAC. paramenrs samp tote | Switching Waveforms and Test Circuit Yoo 20% re Input 10%, {puss 1 SCOPE oe | GeNERATOR | i 1 DUT. [om ovo | | fon To 70% ! 1 i ¥ 0% lor, | ee > + = 9-62
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