VP12A SUTEX | Alldatasheet
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Technical content
SUPERTEX INC OL DE gg a?732e95 00017349 b r : VP12A : @® Supertex inc. 3 9-/9 ® P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVo55/ ‘Order Number / Package BVoc [os [tose [to-220 | pice | ov | _oea | 6A __—i|_‘VP1210Nt VP1210N2 VP1210NS VP1210ND Features Advanced DMOS Technology Freedom from secondary breakdown ‘These enhancement-mode (normally-off) power transistors utl- i ize a vertical DMOS structure and Supertax's well-proven slicon- Low power drive requirement gate manufacturing process. This combination produces devices 1D Ease of paralleling with the power handling capabilities of bipolar transistors and with ; the high Input impedance and nagative temperature coefficient (Low Cs, and fast switching speeds inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway, and thermally- G_Exceltont thermal stablity induced secondary breakdown. Integral Source-Drain dlode Supertex Vertical DMOS Power FETs are ideally suited to a wide High input impedance and high gain range of switching and amplifying applications where high break- wa | down voltage, high input impedance, low input capacitance, and : D_ Complementary N- and P-Channel devices fast switching speeds are desired. Applications Package Options (Notes 1 and 2) 1D Motor control | O Convertors
0 Amplifiers
(Power supply circuits Driver (Relays, Hammers, Solenoids, Lamps, Memories, Displays, Bipolar Transistors, etc.) 1038 oR ms Absolute Maximum Ratings es i - Drain-to-Source Voltage BVoss 03 mm F Drain-to-Gate Voltage : BV 505 Gate-to-Source Voltage £200 Operating and Storage Temperature 85°C to +150°C ote: Seo Package Outn seston or dsc pinot. Soldering Temperature* 300°C Nole 2: See Array secon fr quad pinouts. : “Distance of 1.6 mm trom case for 10 seconds. | 9-57 i he i
SUPERTEX INC Oo pega7?3eis oooL74o 2 T : : VP12A, Thermal Characteristics T-3?-09 1, (continuous)* Power Dissipation Ge lon torn’ 7 @T, = 25°C “cw Hes eto co as ra saa | Hoa ese tw [es fo asa | a broass [son ets oars ae a Ip (continuous is liited by max ated Ty. 5 Electrical Characteristics (@ 25°C unless otherwise specified) (Notes 1 and 2) [ syr 2 (|. met ae 1 |_Typ | ft x] (|. Conditions | BY, Drain-to-Source | so | “ ree, feetet | |: fete Nes? [vPi20¢ | -40 | [ait —T change n Vega, witTompaire [| 47 | 88 [ niVEG | Tp=-T0MA Vege Vos | Lie cate body cakage | tO | 00 | A | Voge 220. gn0 Zoro Gate Voltage Drain Current [100 WA | Vos=0.Vos=Max Rating | Vas = 0: Vpg = 0.8 Max Rating Ty = 125°C ‘ON-State Drain Current [45 | 20 | a Les Mes 25V [60 | 120 | Rosi | Static Drain-to-Source Lio [+] a | Voge SMA | ON-State Resistance [05 [08 | a [os [Tenet Capacincs || 880 | 680 | Vag = 0; Vog = -28V [Goce] Gommon Source Output Gapaciancs |" [280 | 278 | pF | tai Mie [Cres | Reverso Transfer Capactance [| 25 [40 | [teow | TurONDelayTine TT OT 80 A tony [om | tamorrDeaytime [70 | 108 | ea a [ig iade FowaraVaregs trop BY oe SVs Lf Rovere Recovey Tine |e] pr TVs? LTS aTbt parameters 100s tanod at 250 wrioss era sae. (Pula os 800p8 ple, 2 Gay oe) Note 2: AIAG. parameter samp tested. Switching Waveforms and Test Circult oo 0% me ! wna 2% re] | sas SOF | geheraTon | SCOPE born | : pur. Output H 1 600 Tom 0% | | ; oon) hers Lo tt 1 ‘ 9-58
SUPERTEX INC ol pe ar773z29S 0001741 4 T VP12A Typical Performance Curves T-39-13 ‘Output Characteristics Saturation Characteristics Coo CLL Peery | ae COC 4. COE He Been 45488 a» LOA a. LLL Ze | ger Cee i. eco 2. LO 2 * eee 2 “PATI IT . |p eea Coo Wo y Zanenenee » Eee ew >» ACE Transconductance Vs. Drain Current Power Dissipation Vs. Case Temperature COLL RKTT [1 [| ew LLL o( NT} | CEP Peery Tt CT AIEEE a. LOD Dee eo LLY a ee ae] F ” Raf NE
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SUPERTEX INC o1 ve azzaaqs O0o01742 b T VP12A, T-39-0? BVDSS Variation with Temperature ON- Resistance Vs. Drain Current COCO Cio e Eceeeee ‘APRECETTCH Fy LAI 3 ee a a 2 Cen PCCP og HIE 2 g P PAE g EEE i (Ee a COC ee CEC Errrr 4 COLETTE Ts fe) Ips (AMPERES) Transfer Characteristics Vth) and RDS Variation with Temperature CCC eELLLL Ds CCCECee i y\\" Hee Ee oe BR -2 L/\\ 5 Ne LA F eceecece’ 2] ee Bee cesar ZS -e 4 2 a 2
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Ae Zee 8 “PECTS COCOA wf LE LLOAA TT CECE 4 VGs (VOLTS) Tufte) Capacitance Vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics a « POO ez - Sane 7 Aa @ ON a 6 LL afer 8 ol as @) LLOOATT 5 <a 8 COR § _ 8“ COAT a cs > PER LT | ee Case os »2CECE Cer Vos (VOLTS) ‘Qc (NANOCOULOMBS) 9-60